0.9V pinch-off voltage low noise high gain JFET
The IFND89 is a new n-channel JFET transistor with integrated back to back input over voltage protection diodes.
The device offers the designer a unique combination of low noise ( 6.8nV/√Hz typ. ) high gain device combined with a low pinch-off voltage of less than 0.9V.
The internal back to back diodes provide over voltage protection.
The low current / low voltage capability of the IFND89 makes the device ideal for battery operated applications.
Typical applications for this transistor are miniature microphones, high gain low noise amplifiers, low current consumption amplifiers and ultra high impedance low signal level pre-amplifiers examples of which can be found in test and measurement instrumentation, medical devices, sensors and particle detectors.
The device is offered in a 5 leaded SC-70 package as well as standard die format for mounting on hybrids.
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