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| IFND89 low noise, low power |
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The IFND89 is a new n-channel JFET transistor with integrated back to back input over voltage protection diodes. The device offers the designer a unique combination of low noise ( 6.8nV/√Hz typ. ) high gain device combined with a low pinch-off voltage of less than 0.9V. The internal back to back diodes provide over voltage protection
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0.9V pinch off voltage
6.8nV/√Hz noise
ideal for high quality low signal amplification
Parts available in die form |
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| JFETs for audio amplifiers |
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A range of low noise junction field effect transistors designed for audio amplification applications.
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Low noise (3nV/sqrtHz typical )
High input impedance
Specific parameter testing available
Parts available in die form |
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| JFETs for low noise high gain applications |
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A range of low noise high gain junction field effect transistors. These are ideal for transducer amplifiers.
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Low noise
High input impedance
Specific parameter testing available
Parts available in die form |
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| Differential JFETs |
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Matched differential JFETs. These devices are ideal for differential amplifier applications which require matched JFETs.
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Low noise
High input impedance
Specific parameter testing available
Parts available in die form |
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| JFETs for choppers & analog switches |
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Junction field effect transistors for analog switch and chopper applications
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Low capacitance
Low Rds(on)
Specific parameter testing available
Parts available in die form |
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| JFETs for current limiting applications |
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Junction field effect transistors for current limiting applications such as differential amplifiers.
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-50V min. gate source breakdown
TO18 & SOT23 packages
Specific parameter testing available
Parts available in die form |
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| JFETs for UHF & VHF applications |
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Junction field effect transistors for medium frequency applications such as UHF and VHF designs.
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Low capacitance
High input impedance
Specific parameter testing available
Parts available in die form |
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| High Voltage JFETs |
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High gate source breakdown voltage JFETs. This range offers some of the highest breakdown voltage JFETs available today.
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300V V(br)gdo
TO-39 package
Specific parameter testing available
Parts available in die form |
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| Japanese JFET equivalents |
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Equivalents to some hard to source JFETS. These devices are also available with specific partameter testing.
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Low noise audio amplifer JFETs
High gain low noise JFETs
Parts available in die form
Specific parameter testing available |
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