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PLANET - Transistors, Switches & Diodes



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  1. AMALTHEA - High Temperature 80V/3A Dual Diode

    AMALTHEA - High Temperature 80V/3A Dual Diode

    The CHT-AMATHEA is a Medium Power 80V/3A dual-diode designed to achieve high performance in an extremely wide temperature range: typical operation temperature
    goes from -55°C to 225°C.
    Three product options are available:

        • Common Anode
        • Common Cathode
        • Dual Series

    The CHT-AMALTHEA is available in a metal can TO-257 package.

        • Temperature range: -55°C to +225°C
        • Maximum reverse voltage: 80V
        • Max forward current @ 225°C: 3A
        • Capacitance: 36pF Typ.
        • Package TO-257  metal can - Isolated Case
        • 3 configurations available
    More Info
  2. CALLISTO: High Temperature Dual, Common Anode, Small Signal Diodes

    CALLISTO: High Temperature Dual, Common Anode, Small Signal Diodes

    CHT-CALLISTO features high temperature dual common anode 80V / 300mA diodes packaged in a hermetically sealed TO18 metal can. It is designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C while keeping leakage currents low. This dual diode can
    be used in a variety of applications, including rectification and general purpose.

        • Temperature range: -55°C to +225°C
        • Maximum reverse voltage: 80V
        • Max forward current @ 225°C: 300mA
        • Capacitance: 8.5pF
        • Reverse leakage: 8.9µA @ 225°C 
        • TO18 metal can package
    More Info
  3. EARTH: High Temperature Power MOSFETs N-channel 80V

    EARTH: High Temperature Power MOSFETs N-channel 80V

    The CHT-NMOS8001 is a Medium Power 80V/1A N-channel power MOSFET’s de-signed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C.
    The CHT-NMOS8001 is available in a TDFP16 hermetically-sealed Ceramic SMD package.

    More Info
  4. ELARA - 80V High Temperature Quad Diode

    ELARA - 80V High Temperature Quad Diode

    The CHT-ELARA is a high temperature 80V/500mA quad diode in a hermetically sealed TDFP16 ceramic package. It is designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C while keeping leakage currents low.
    This quad diode can be used in a variety of applications, including rectification, clamping and general purpose.

        • Temperature range: -55°C to +225°C
        • Maximum reverse voltage: 80V
        • Max forward current @ 225°C: 450mA
        • Capacitance: 15pF Typ.
        • TDFP16 ceramic package
    More Info
  5. EUROPA:  High Temperature 1200V Dual SiC Schottky Diode Module

    EUROPA: High Temperature 1200V Dual SiC Schottky Diode Module

    The CHT-EUROPA is a high-temperature Dual Silicon Carbide (SiC) Schottky Diode in a single hermetic module.  It is suitable to implement efficient power voltage rectifier, e.g. in AC-DC converter.

    This product is guaranteed for normal operation on the full temperature range -55°C to +225°C (Tj).   Each device has a breakdown voltage in excess of 1200V and is capable of switching currents of 20A and 30A.

    The CHT-EUROPA IC can exceed its maximum continuous DC current at 175°C (Tc).

    Benefits:

    • Support of high-frequency switching (almost no switching losses).
    • Reduced Heat Sink requirement
    • Extended lifetime and high reliability
    • Harsh environments and high tem-perature power converters
     
    More Info
  6. GANYMEDE: High Temperature Dual Series Small Signal Diodes

    GANYMEDE: High Temperature Dual Series Small Signal Diodes

    The CHT-GANYMEDE is a high tempera-ture dual series 80V / 300mA diode in a hermetically sealed TO18 metal can pack-age. It is designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C while keeping leakage currents low. This dual diode can be used in a variety of applications, including rectifi-cation, clamping and general purpose.

        • Temperature range: -55°C to +225°C
        • Maximum reverse voltage: 80V
        • Max forward current @ 225°C: 300mA
        • Capacitance: 8.5pF
        • Reverse leakage: 8.9µA @ 225°C 
        • TO18 metal can package
    More Info
  7. MARS - High Temperature Small-Signal MOSFET P-channel 30V

    MARS - High Temperature Small-Signal MOSFET P-channel 30V

    The CHT-MARS is a high voltage 30V P-channel small-signal MOSFET designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C.

        • Temperature range: -55°C to +225°C
        • Drain voltage up to -30V
        • Max 310mA  drain current @ 225°C
        • Vgs=0V to -5V
        • Input capacitance: 14pF
        • Gate Leakage: 0.4µA @ 225°C 
        • Available in TO18 and TO39 metal can package
    More Info
  8. MERCURY - High Temperature Small-Signal MOSFET N-channel 80V

    MERCURY - High Temperature Small-Signal MOSFET N-channel 80V

    The CHT-SNMOS-80 is a high voltage 80V N-channel small-signal MOSFET designed to achieve high performance in an extremely wide temperature range: typical operation
    temperature goes from -55°C to 225°C.

        • Temperature range: -55°C to +225°C
        • Drain voltage up to 80V
        • Max 300mA  drain current @ 225°C
        • Vgs=0V to +5V
        • Input capacitance: 23pF
        • Gate Leakage: 0.4µA @ 225°C 
        • Available in TO18 and TO39 metal can package
    More Info
  9. MOON - High Temperature dual MOSFET N-channel 40V

    MOON - High Temperature dual MOSFET N-channel 40V

    The CHT-MOON is a dual, high-voltage N channel MOSFET in a very dense CSOIC16 SMD package. It is designed to achieve high performance in an extremely wide temperature
    range: typical operation temperature goes from -55°C to 225°C while keeping leakage currents low.  It has been optimized for use in low and medium power DC-DC converters such as synchronous buck operation, in combination with PWM controller CHT-MAGMA. This product is ideal for compact, high-efficiency DC-DC converters that supply voltages to applications where the operating temperature is high or (and) where reliability is critical.

        • Temperature range: -55°C to +225°C
        • Drain voltage up to 40V
        • Max drain current @ 225°C: 2A
        • Ron=0.4 Ohms (each transistor) 
        • Vgs=0V to +5V
        • Ceramic SOIC16 package
    More Info
  10. NEPTUNE - High Temperature, High Voltage Power MOSFET 1200V/10A

    NEPTUNE - High Temperature, High Voltage Power MOSFET 1200V/10A

    The CHT-NEPTUNE manufacturerd by Cissoid is a high-temperature, high-voltage, Silicon Carbide MOSFET switch. It is available in a metal TO-257 package – the metal case being isolated from the switch terminals.

    The device has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A at the maximum temperature (225°C), and features a body diode that can be used as free-wheeling diode.


    Benefits:

    • High-power density converters (support of high-frequency switching and reduced cooling).
    • Extended lifetime and high reliability.
    • Harsh environments and high temper-ature power converters.
    • Seamless driving with CHT-THEMIS, CHT-ATLAS and HADES® gate driver solutions.
    More Info
  11. PLUTO:  High Temperature 1200V/30A Dual SiC MOSFET Module

    PLUTO: High Temperature 1200V/30A Dual SiC MOSFET Module

    CHT-PLUTO is a high temperature 1200V/30A Dual Silicon Carbide MOSFET in a single hermetic module.  It is suitable to implement a power half bridge for applications such as DC-DC converters or motor drives in high temperature environments.

    The two independent switches can be used in parallel to deliver a total of 60A.  Each MOSFET has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A.

    They have a on-resistance of 45mΩ at 25°C and 100mΩ at 225°C at VGS=20V, and each MOSFET is parelled with a free-wheeling zero reverse recovery SiC Schottky diode.

    Benefits:

        • High-power density converters (sup-port of high-frequency switching and reduced cooling)
        • Extended lifetime and high reliability
        • Harsh environments and high temper-ature power converters
        • Seamless driving with the HADES® gate driver solutions
     
    More Info
  12. SATURN: High Temperature Power 40V N-channel MOSFETs

    SATURN: High Temperature Power 40V N-channel MOSFETs

    The CHT-NMOS-40xx is a high voltage N-channel power MOSFET family designed to achieve high performance in an extremely wide temperature range: typical operation tempera-ture goes from -55°C to 225°C.
    CHT-NMOS40 parts sustain the highest temperatures while keeping leakage currents low.

        • Temperature range: -55°C to +225°C
        • Drain voltage up to 40V
        • Max drain current @ 225°C: 3.9A (4005), 7.6A (4010), 14A (4020)
        • Ron=0.4Ω (4005), 0.2Ω (4010), 0.12Ω (4020) @25°C
        • Vgs=-0.5V to +5.5V
        • Availabe in TO254 Metal package
    More Info
  13. VENUS: High Temperature Power MOSFETs P-channel 30V

    VENUS: High Temperature Power MOSFETs P-channel 30V

    The CHT-PMOS30xx is a family of high voltage P-channel power MOSFET’s de-signed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C.

        • Temperature range: -55°C to +225°C
        • Drain voltage up to 30V
        • Max drain current @ 225°C: 2A (3002), 4A (3004), 8A (3008)
        • Ron=3.9Ω (3002), 2Ω (304), 1Ω (3008) @225°C
        • Vgs=0V to -5V
        • Available in TO254 Metal package
    More Info

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