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TITAN - Power Drivers



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  1. ATLAS: Motor Driver IC

    ATLAS: Motor Driver IC

    CHT-ATLAS is a high-temperature, high reliability power transistor driver IC specifically designed to drive wide-bandgap power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices including normally-On and normally-Off JFETs, MOSFETs and BJTs.

    Features

        • Operating junction temperature: from -55°C to +225°C
        • Gate drive supply voltage: 5 to 30V
        • Two channels
        • Separate logic level control inputs
        • Output current: up to 2 x ±2A @ 225°C
        • Propagation delay: 40 ns typ
        • Rise time / fall time: 10ns Typ. (with CLoad=1nF and VCC=15V)
        • Soft-shut down
        • High Impedance mode
        • Capable to drive normally-On and normally-Off devices
        • Validated at 225°C for 1000 hours (and still on-going)
        • Package: CSOIC28
    More Info
  2. EVK-HADES® 1210: High-Temperature Isolated Gate-Driver

    EVK-HADES® 1210: High-Temperature Isolated Gate-Driver

    EVK-HADES1210 Evaluation Kit implements a power half-bridge based on the HADES v2 isolated gate driver and two NEPTUNE, a 10A/1200V SiC MOSFET.
    It includes an evaluation board that can be used immediately to implement a power converter or a motor drive, and is designed for bus voltage up to 1200V and with application current up to 10A. The two channels can be controlled independently of each other or use a locally generated non-overlap delay.

    The Reference Design is based on the 2nd generation HADES chipset which consists of 2 devices: a Primary device CHT-HADES2P and a secondary device CHT-HADES2S.
    The solution includes an isolated power supply built around CHT-HADES2P PWM controller.

    The Evaluation Board EVK-HADES2® can be used for immediate testing with SiC MOSFET devices. The board is populated with CISSOID integrated circuits in ceramic package guaranteed for -55°C to +225°C. The board is based on a polyimide PCB (rated 200°C). The passive components and the desaturation diode allow operation up to 175°C, with possible short excursions to 225°C for testing.
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  3. EVK-HADES®: High-Reliability, High-Temperature Half-Bridge Isolated Gate-Driver

    EVK-HADES®: High-Reliability, High-Temperature Half-Bridge Isolated Gate-Driver

    HADES® is a turnkey half-bridge isolated gate driver Reference Design designed for high-temperature, high speed and high-reliability applications. While it has been tailored to support the newest generation of wide-bandgap power switches such as SiC and GaN, the solution is also suitable for driving standard IGBTs or transistors anywhere there is a need to improve the reliability of the systems. 
     
    With a standard gate current capability of ±4A or ±2A, the solution is scalable up to ±20A, while supporting a bus voltage up to 1200V.
     
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  4. EVK-RHEA - 4 Channel Isolated Data Link

    EVK-RHEA - 4 Channel Isolated Data Link

    The EVK-RHEA Evaluation Kit is a high temperature data transmission solution with galvanic isolation of 2.5kV and operating reliably from -55°C to +225°C. 

    The Evaluation Board is built from a +200°C polyimide PCB, and it is populated with two CHT-RHEA Dual Isolated Transceiver ICs.   Isolation is achieved by means of a pulse transformer in each data line.

    The solution can be used to replace opto-couplers in high voltage, high temperature situations, and is a self-contained function which can be connected directly into an existing system.

    The board is suitable for operation up to +175°C, allowing short excursions to +225°C for high temperature testing. 

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  5. EVK-THEMIS-ATLAS - Power Transistor Driver Evaluation Kit

    EVK-THEMIS-ATLAS - Power Transistor Driver Evaluation Kit

    The EVK-THEMIS-ATLAS evaluation board is designed to seamlessly drive the most advanced power switches, including Silicon Carbide (SiC) MOSFETs and JFETs, as well as Silicon IGBTs and MOSFETs used in high efficiency motor drives and power converters.

    The chipset is the cornerstone of energy-saving, reliable power converters and motor drives; and as part of the HADES high temperature Gate Driver series, they can be located next to SiC power switches, reducing the parasitic inductance to a few nH, reducing switching losses thereby increasing the switching frequency of power converters.

    The evaluation board allows immediate evaluation of the performance of the power transistor driver chipset in applications such as motor drives and power converters for applications in aerospace, renewable energy and hybrid vehicles, and is suitable for operation up to +175°C, allowing short excursions to +225°C for high temperature testing.

    More Info
  6. HADES v2: CHT-HADES2P Primary Side

    HADES v2: CHT-HADES2P Primary Side

    CHT-HADES2P is a high-temperature, high reliability single chip primary side of a gate driver solution. It implements a current mode controlled DC-DC flyback converter for the generation of the on-board power supplies and the isolated data transmission from the external control interface to the 2 secondary sides and performs local fault management.
     
    This device has been designed in a way to reduce as much as possible the required number of external passive devices and to limit the requirement in high capacitor values (large footprint at high temperature).

    Its features a UVLO monitoring on the incoming power supply, a linear voltage regulator to generate the local 5V supply voltage and an on/off keying modulation of the data signal towards the secondary side.

    It offers wide voltage range for the input PWM signals (5 to 15V) and hysteresis to enhance immunity to system noise; it also features a spike filtering function on those PWM signals to prevent spurious turn-on/turn-off of the secondary gate drivers.
    More Info
  7. HADES v2: CHT-HADES2S Secondary Side

    HADES v2: CHT-HADES2S Secondary Side

    CHT-HADES2S is a high-temperature, high reliability single chip fully integrated gate driver specifically designed to drive wide-bandgap high voltage / high power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It offers the most compact solution available on the market thanks to its small size and the low number of external components it requires. It also features the highest output current in the industry for products of this type.

    CHT-HADES2S can be used with standard silicon MOSFETs and IGBTs in standard temperature applications (e.g. 125°C) where it brings an increase in reliability and lifetime compared to traditional solutions.

    The circuit features push-pull transistors capable of sourcing/sinking up to 12A each.  It includes soft-shutdown, under-voltage lockout, de-saturation detection, Active Miller Clamping, over-temperature sensing and isolation interface to primary function.

    CHT-HADES2S can be used either stand-alone or in combination with CHT-HADES2P, which generates control signal to drive high bandwidth transistors. 

    More Info
  8. HYPERION: High Temperature Half-Bridge Driver

    HYPERION: High Temperature Half-Bridge Driver

    The HYPERION Half-Bridge driver is suitable for driving MOSFETs in DC-DC converters and for half-bridge driver designs in electric motor control applications and power inverters.

    Features

        • Fast rise and fall times
        • Output peak current in excess of 1A
        • Floating High-side driver sustain boost voltages of up to 50 V
        • Integrated High-Side Bootstrap Diode
        • All-in-one synchronous buck driver
        • Adaptive non-overlap circuit
        • Output enable control
        • Low-side driver disabling
        • Crowbar control
        • Under voltage lockout (UVLO)
        • Validated at 225°C for 43800 hours (CDIL28) and 20000 hours (CSOIC28)
        • Operational from -55°C to +225°C (Tj)
    More Info
  9. PALLAS: High Temperature Full-Bridge Driver

    PALLAS: High Temperature Full-Bridge Driver

    The PALLAS is a high-temperature Full-Bridge N-channel MOSFET driver comprising of two independent low-side and high-side driver channels including integrated charge pumps associated to the high-side channels.

    Features

        • Gate high-side voltage up to 60V
        • High-side n-channel MOSFET supply voltage up to 50V
        • Gate low-side voltage up to 10V
        • 10V analog supply
        • 5V digital supply
        • Qualified from -55 to +225°C (Tj)
    More Info
  10. RHEA - High Temperature Dual-Channel, 2Mbit/s Isolated Data Transceiver

    RHEA - High Temperature Dual-Channel, 2Mbit/s Isolated Data Transceiver

    RHEA is  a high temperature data transmission solution with galvanic isolation of 2.5kV and operating reliably from -55°C to +225°C.  

    The CHT-RHEA is a single chip dual channel, full duplex transceiver (2 transmit and 2 receive channels). The magnetic isolation on each channel is ensured by an external tiny pulse transformer, of which the core diameter does not exceed 6mm (0.24”). The complete 4-channel data transmission requires one instance of CHT-RHEA on each side of the pulse transformers.

    RHEA is part of CISSOID’s complete isolated gate driver technology HADES™, where it ensures transmission of control and feedback signals across the low and high voltage domains.

    Typical performances:

        • Temperature range: -55°C to +225°C
        • Data rate:  2Mbits/s
        • Transmission delay below 100ns
        • Jitter lower than 21ns
        • Immunity to dV/dt : 50kV/µs.
    More Info
  11. THEMIS: Gate Driver Chipset

    THEMIS: Gate Driver Chipset

    CHT-THEMIS is the controller block of the Power Transistor Driver solution CHT-THEMIS and CHT-ATLAS.

    The chipset is specifically designed to drive wide-bandgap power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices including normally-On and normally-Off JFETs, MOSFETs and BJTs.

    The CHT-THEMIS can drive up to five CHT-ATLAS chips for very high power applications that require up to ±20A to the gate of the power device.  It implements a state machine that manages the control and the fault signals, it embeds a voltage reference as well as a 5V linear voltage regulator which is used to supply CHT-ATLAS. This 5V power supply can also be used to power up other external circuits, such as the isolated transceiver CHT-RHEA for complete isolated gate-drive implementations.

    The circuit features an adjustable under-voltage lockout (UVLO) function with hysteresis as well as a de-saturation detection circuit. It also includes a pulse generation pre-driver to accommodate for Normally Off SiC JFET.

    CHT-THEMIS also features an active Miller clamping (AMC) function and pre-driver for an external transistor.

    More Info

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