InterFET 2N4117 and 2N4117A Series

InterFET 2N4117 and 2N4117A Series
  • Through-hole N-channel JFET
  • Low leakage of 0.25pA typical
  • Low input capacitance of 2pF typical
  • Minimum gate to source breakdown voltage of -40V
  • Maximum gate to source reverse current of -10pA (2N4117) or -1pA (2N4117A)
  • Drain to source saturation current 0.03mA minimum
  • Gate to source cutoff voltage of -0.6V minimumto 1.8V maximum
  • Hermetically sealed TO-72 package suitable for military applications or bare die packages available
  • Forward transconductance of 70μS minimum
  • Continuous device power dissipation 300mW
  • Power derating of 2mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET 2N4117 and 2N4117A Series of N-channel JFETs are targeted for ultra high input impedance applications for mid to high frequency designs. These JFETS offers a gate to source breakdown Voltage of either -40V, a low leakage of 0.25pA (typical) and comes in a through-hole TO-72 package which is hermetically sealed and suitable for military applications, also available as a bare die. The 2N4117 and 2N4117A JFETs have a drain to source saturation current of 0.03mA, low input capacitance of 2pF (typical), high input impedance and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the 2N4117 and 2N4117A JFET series are available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the 2N4117 and 2N4117A JFET series from InterFET include:

  • Low leakage input buffer
  • High frequency amplifier/buffer
  • Ultra high impedance pre-amplifier
  • Voltage controlled resistor
  • Current limiters and regulators

The below table gives the maximum ratings for each resistor model available for the InterFET 2N4117 and 2N4117A series:

InterFET 2N4117 and 2N4117A Specifications

@TA = 25°C, Unless otherwise specified

Specifications
Additional Features
  • JFET series ideal for sensitive mixer and VHF amplifier applications
  • Customisable solutions available
  • Low leakage of 0.25pA typical
Continuous Device Power Dissipation (PD) 300mW
Drain to Source Saturation Current (IDSS) 0.03mA
Forward Transconductance (GFS) 70μS
Gate to Source Breakdown Voltage (BVGSS) 2N4117 and 2N4117A
  • -40V
Operating Temperature -55°C to +125°C
Package/Size
  • TO-72
  • Bare die
Power Derating 2mW/°C

Below is the ordering information table, custom part and binning options are also available

FMS Part Number Example

All InterFET packaged and unpackaged end products meets the requirements of the latest REACH and RoHS 3 (2015/863 directive) standard. Please click on the links below for InterFETs RoHS and REACH statements.

 

 

ROHS COMPLIANCE
PDF Document InterFET RoHS compliance
REACH COMPLIANCE
PDF Document InetrFET REACH compliance
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  • Product Code: InterFET 2N4117 and 2N4117A
  • SKU: InterFET 2N4117 and 2N4117A
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Tags: 2N4117, 2N4117A, 2N4117ACOT, 2N4117ACFT, 2N4117COT, 2N4117CFT