30 Oe series

  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Low power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Direct microcontroller interfacing.
  • Temperature range −40°C to +125°C
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Full-bridge (differential) configuration
  • NVE
  • Rotation sensors using Tunnelling Magnetoresistance (TMR) technology
  • Extremely low power (1.8μA typ. at 2.4V)
  • Precision digital quadrant outputs
  • Wide airgap tolerance
  • Integrated fault detection
  • Ultraminiature TDFN6 packages
  • NVE
  • Rotation sensors using Tunnelling Magnetoresistance (TMR) technology
  • Extremely low power of 1.8μA (typ.) at 2.4V
  • Precision digital quadrant outputs
  • Wide airgap tolerance
  • Integrated fault detection
  • Ultraminiature TDFN6 packages
Please be advised that due to the ongoing supply issues with raw materials affecting the global electronics industry, as well as an increase in orders received by our manufacturing partners, a large number of products are facing increased lead times in recent months. For the latest lead time and stock availability, please contact one of our engineers who will be happy to discuss lead times further and the potential for alternative parts.