InterFET 2N5115 Series

Description

• Through-hole P-channel JFET
• InterFET P0099F Geometry
• Low noise of 8nV/√Hz typical
• Minimum gate to source breakdown Voltage of 30V
• Drain to source saturation current of -15mA minimum
• Gate to source cutoff voltage of 3V minimum
• Hermetically sealed TO-18 package suitable for military applications or as a bare die
• Continuous forward gate current 50mA
• Continuous device power dissipation 500mW
• Power derating of 4mW/°C
• Temperature range between -55°C and +125°C

The InterFET 2N5115 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a through-hole TO-18 package which is hermetically sealed and suitable for military applications and is also available as a bare die. The 2N5115 JFET has a drain to source saturation current of -15mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the 2N5115 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the 2N5115 JFET series from InterFET include:

• Analog switches
• Choppers

The below table gives the maximum ratings for the InterFET 2N5115 series:

@TA = 25°C, Unless otherwise specified