Shop

  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • Compliant
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Low power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Direct microcontroller interfacing.
  • Temperature range −40°C to +125°C
  • Compliant
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Immune to airgap variations
  • Compliant
  • NVE
  • Tunnelling Magnetoresistance (TMR) technology
  • Supply voltage +5.5V
  • Miniature TDFN6 package
  • Microwatt power consumption
  • High output signal without amplification
  • Sine and cosine and outputs
  • Full-bridge (differential) configuration
  • Compliant
  • NVE
  • Rotation sensors using Tunnelling Magnetoresistance (TMR) technology
  • Extremely low power (1.8μA typ. at 2.4V)
  • Precision digital quadrant outputs
  • Wide airgap tolerance
  • Integrated fault detection
  • Ultraminiature TDFN6 packages
  • Compliant
  • NVE
  • Rotation sensors using Tunnelling Magnetoresistance (TMR) technology
  • Extremely low power of 1.8μA (typ.) at 2.4V
  • Precision digital quadrant outputs
  • Wide airgap tolerance
  • Integrated fault detection
  • Ultraminiature TDFN6 packages
  • Compliant

Manufacturers

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