Cissoid

  • Cissoid

Cissoid CMT-PLA1BK12300M IGBT Power Module

Cissoid CMT-PLA1BK12300MA 1200V/300A half-bridge IGBT Power Module
  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25ยฐC) (VCE(sat)= 1.78V @ IC=300A, Tj=150ยฐC)
  • Low Switching Energy (Eon= 32mJ at Tj=150ยฐC) (Eoff= 39.6mJ Tj=150ยฐC)
  • Gate charge: QG=2.25ฮผC
  • Operating range -40 to +175ยฐC (Tj)
  • Package: CPAK-62
  • Cissoid

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid Half-Bridge IGBT Power Module CMT-PLA1BL12300MA
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90ยฐC: 450A) (@ TC=125ยฐC: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150ยฐC) (Eoff= 34.5mJ Tj=150ยฐC)
  • Gate charge: QG=2.3ฮผC
  • Operating range -40 to +175ยฐC (Tj)
  • Package : CPAK-EDC
  • Cissoid

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC
  • Cissoid

Cissoid CXT-PLA3BG07820R IGBT Power Module

SIC Power Module from Cissoid CXT-PLA3BG07820R
  • Max Collector Voltage:ย  750V
  • Implemented Collector Current: 820A
  • DC Collector Current @ TF=80ยฐC: 450A
  • Low Saturation Voltage (VCE(sat)= 1.15V @ IC=450A, Tj=25ยฐC) (VCE(sat)= 1.25V @ IC=450A, Tj=175ยฐC)
  • Low Switching Energy (Eon= 16.8mJ at Tj=25ยฐC) (Eoff= 15.7mJ Tj=25ยฐC)
  • Operating range -40 to +175ยฐC (Tj)

Cissoid CMT-PLA1BK12300M IGBT Power Module

Cissoid IGBT Power Module 1200V / 300A
  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25ยฐC) (VCE(sat)= 1.78V @ IC=300A, Tj=150ยฐC)
  • Low Switching… Read More

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid IGBT Power Module 1200V / 300A
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90ยฐC: 450A) (@ TC=125ยฐC: > 300A)
  • Low Switching Energy: (Eon= 34mJ… Read More

Cissoid CMT-PLA3SB12340A

Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous… Read More

Cissoid CXT-PLA3BG07820R IGBT Power Module

Cissoid IGBT Power Module 750V / 820A
  • Max Collector Voltage: 750V
  • Implemented Collector Current: 820A
  • DC Collector Current @ TF=80ยฐC: 450A
  • Low Saturation Voltage (VCE(sat)= 1.15V… Read More
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About Cissoid

CISSOID are leaders in high-temperature semiconductor solutions, delivering standard products and custom solutions in extreme temperature and harsh environments. These solutions include:

  • Power Management
  • Power Conversion
  • Signal Conditioning

CISSOID provides high-reliability products guaranteed from -55 ยฐC to +225 ยฐC and commonly used outside that range, from cryogenic lows to upper extremes.

Whether the ambient temperature is low but the power dissipation heats up the chips, or in high-temperature environments, these products enable energy, weight and cost savings in lighter, cooling-free and more compact electronic systems. They are used in mission-critical systems as well as in applications requiring long term reliability. CISSOID products are supplied to a number of leaders in the Oil & Gas, Aeronautics, Industrial and Automotive markets.

For their official website, please visit www.cissoid.com