Cissoid

  • Cissoid
  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC
  • Cissoid
  • High temperature voltage reference
  • Maximum output current of 3mA at +225ยฐC
  • Quiescent current of 700ยตA
  • Validated at +225ยฐC for 30,000 hours
  • Cissoid
  • High temperature, negative low-dropout linear voltage regulator
  • Maximum output current of 1A at +225ยฐC
  • Quiescent current of 3mA
  • Validated at +225ยฐC for 30,000 hours (and still on-going)
  • Cissoid
  • High temperature low-dropout linear voltage regulator
  • Maximum output current of 1A at +225ยฐC
  • Quiescent current of 3mA
  • Validated at +225ยฐC for 43,800 hours (and still on-going)
  • Cissoid
  • High temperature logic gates
  • Exceeds AEC-Q100 Grade 0 requirements (qualification pending)
  • 16mA output drive current
  • EDS: 2000V HBM or 200V MM
  • CMOS Low power consumption
  • Cissoid
  • High temperature adjustable linear voltage regulator
  • Exceeds AEC-Q100 Grade 0 requirements (qualification pending)
  • Quiescent current of 1.1mA
  • Chip-enable input signal allowing to place the circuit in low power, disable mode
  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC
  • High temperature voltage reference
  • Maximum output current of 3mA at +225ยฐC
  • Quiescent current of 700ยตA
  • Validated at +225ยฐC for 30,000 hours
  • High temperature, negative low-dropout linear voltage regulator
  • Maximum output current of 1A at +225ยฐC
  • Quiescent current of 3mA
  • Validated at +225ยฐC for 30,000 hours (and still on-going)
  • High temperature low-dropout linear voltage regulator
  • Maximum output current of 1A at +225ยฐC
  • Quiescent current of 3mA
  • Validated at +225ยฐC for 43,800 hours (and still on-going)
  • High temperature logic gates
  • Exceeds AEC-Q100 Grade 0 requirements (qualification pending)
  • 16mA output drive current
  • EDS: 2000V HBM or 200V MM
  • CMOS Low power consumption
  • High temperature adjustable linear voltage regulator
  • Exceeds AEC-Q100 Grade 0 requirements (qualification pending)
  • Quiescent current of 1.1mA
  • Chip-enable input signal allowing to place the circuit in low power, disable mode
Authorised Partner

About Cissoid

CISSOID are leaders in high-temperature semiconductor solutions, delivering standard products and custom solutions in extreme temperature and harsh environments. These solutions include:

  • Power Management
  • Power Conversion
  • Signal Conditioning

CISSOID provides high-reliability products guaranteed from -55 ยฐC to +225 ยฐC and commonly used outside that range, from cryogenic lows to upper extremes.

Whether the ambient temperature is low but the power dissipation heats up the chips, or in high-temperature environments, these products enable energy, weight and cost savings in lighter, cooling-free and more compact electronic systems. They are used in mission-critical systems as well as in applications requiring long term reliability. CISSOID products are supplied to a number of leaders in the Oil & Gas, Aeronautics, Industrial and Automotive markets.

For their official website, please visit www.cissoid.com