• Cissoid

Cissoid CMT-PLA1BK12300M IGBT Power Module

Cissoid CMT-PLA1BK12300MA 1200V/300A half-bridge IGBT Power Module
  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25°C) (VCE(sat)= 1.78V @ IC=300A, Tj=150°C)
  • Low Switching Energy (Eon= 32mJ at Tj=150°C) (Eoff= 39.6mJ Tj=150°C)
  • Gate charge: QG=2.25μC
  • Operating range -40 to +175°C (Tj)
  • Package: CPAK-62
  • Cissoid

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid Half-Bridge IGBT Power Module CMT-PLA1BL12300MA
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150°C) (Eoff= 34.5mJ Tj=150°C)
  • Gate charge: QG=2.3μC
  • Operating range -40 to +175°C (Tj)
  • Package : CPAK-EDC
  • Cissoid

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25°C/90°C
  • Low On Resistance of 3.25 mΩ typical
  • Junction Temperature: -40°C to +175°C
  • Cissoid

Cissoid CXT-PLA3BG07820R IGBT Power Module

SIC Power Module from Cissoid CXT-PLA3BG07820R
  • Max Collector Voltage:  750V
  • Implemented Collector Current: 820A
  • DC Collector Current @ TF=80°C: 450A
  • Low Saturation Voltage (VCE(sat)= 1.15V @ IC=450A, Tj=25°C) (VCE(sat)= 1.25V @ IC=450A, Tj=175°C)
  • Low Switching Energy (Eon= 16.8mJ at Tj=25°C) (Eoff= 15.7mJ Tj=25°C)
  • Operating range -40 to +175°C (Tj)

Cissoid CMT-PLA1BK12300M IGBT Power Module

Cissoid IGBT Power Module 1200V / 300A
  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25°C) (VCE(sat)= 1.78V @ IC=300A, Tj=150°C)
  • Low Switching… Read More

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid IGBT Power Module 1200V / 300A
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ… Read More

Cissoid CMT-PLA3SB12340A

Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous… Read More

Cissoid CXT-PLA3BG07820R IGBT Power Module

Cissoid IGBT Power Module 750V / 820A
  • Max Collector Voltage: 750V
  • Implemented Collector Current: 820A
  • DC Collector Current @ TF=80°C: 450A
  • Low Saturation Voltage (VCE(sat)= 1.15V… Read More

Manufacturers

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Modular Systems

Modular systems covering IGBT power modules, SiC gate drivers, intelligent power modules, inverter control modules and data acquisition modules. Suitable for power conversion, drive control and modular system integration in industrial electronic designs.