We’re Exhibiting atย Space Tech Europe 2025

Space Tech Expo Europe, 18-20th November 2025, Bremen, Germany, Stand G56

  • Cissoid

Cissoid CMT-PLA1BK12300M IGBT Power Module

Cissoid CMT-PLA1BK12300MA 1200V/300A half-bridge IGBT Power Module
  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25ยฐC) (VCE(sat)= 1.78V @ IC=300A, Tj=150ยฐC)
  • Low Switching Energy (Eon= 32mJ at Tj=150ยฐC) (Eoff= 39.6mJ Tj=150ยฐC)
  • Gate charge: QG=2.25ฮผC
  • Operating range -40 to +175ยฐC (Tj)
  • Package: CPAK-62
  • Cissoid

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid Half-Bridge IGBT Power Module CMT-PLA1BL12300MA
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90ยฐC: 450A) (@ TC=125ยฐC: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150ยฐC) (Eoff= 34.5mJ Tj=150ยฐC)
  • Gate charge: QG=2.3ฮผC
  • Operating range -40 to +175ยฐC (Tj)
  • Package : CPAK-EDC
  • Cissoid

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC
  • Cissoid

Cissoid CXT-PLA3BG07820R IGBT Power Module

SIC Power Module from Cissoid CXT-PLA3BG07820R
  • Max Collector Voltage:ย  750V
  • Implemented Collector Current: 820A
  • DC Collector Current @ TF=80ยฐC: 450A
  • Low Saturation Voltage (VCE(sat)= 1.15V @ IC=450A, Tj=25ยฐC) (VCE(sat)= 1.25V @ IC=450A, Tj=175ยฐC)
  • Low Switching Energy (Eon= 16.8mJ at Tj=25ยฐC) (Eoff= 15.7mJ Tj=25ยฐC)
  • Operating range -40 to +175ยฐC (Tj)

Cissoid CMT-PLA1BK12300M IGBT Power Module

  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25ยฐC) (VCE(sat)= 1.78V @ IC=300A, Tj=150ยฐC)
  • Low Switching Energy (Eon= 32mJ at Tj=150ยฐC) (Eoff= 39.6mJ Tj=150ยฐC)
  • Gate charge: QG=2.25ฮผC
  • Operating range -40 to +175ยฐC (Tj)
  • Package: CPAK-62

Cissoid CMT-PLA1BL12300MA IGBT Power Module

  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90ยฐC: 450A) (@ TC=125ยฐC: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150ยฐC) (Eoff= 34.5mJ Tj=150ยฐC)
  • Gate charge: QG=2.3ฮผC
  • Operating range -40 to +175ยฐC (Tj)
  • Package : CPAK-EDC

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC

Cissoid CXT-PLA3BG07820R IGBT Power Module

  • Max Collector Voltage:ย  750V
  • Implemented Collector Current: 820A
  • DC Collector Current @ TF=80ยฐC: 450A
  • Low Saturation Voltage (VCE(sat)= 1.15V @ IC=450A, Tj=25ยฐC) (VCE(sat)= 1.25V @ IC=450A, Tj=175ยฐC)
  • Low Switching Energy (Eon= 16.8mJ at Tj=25ยฐC) (Eoff= 15.7mJ Tj=25ยฐC)
  • Operating range -40 to +175ยฐC (Tj)

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