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Healthcare & Medical

A variety of analog and digital magnetic sensors and digital isolators based on TMR (Tunelling Magnetoresistance) and GMR (Giant Magnetoresistance) technology, available in ultra miniature packages suitable even for portable and implantable medical devices

Range of high quality high voltage relays with rhodium or tungsten contacts, achieving extremely low contact resistance or high switching voltages, respectively

MEMS sensing elements and pressure sensors and general purpose load cells offering high quality, robust build and excellent characteristics
Range of surface-mount chip ultra precision as well as high ohmic resistors, available in virtually any resistance value within their range, and including non-magnetic models, high-temperature models, resistors with no organics etc.

Healthcare & Medical

NVE IL817TE

High speed, High-Temperature, DC-correct digital isolators
Multidirectional four channel isolation (3 transmit, 1 receive)
High speed at 110 Mbps typical
2.5kV_RMS isolation voltage
600 V_RMS working voltage per VDE V 0884-10
50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
Internal refresher clock to ensure response to DC states of input within 9μs maximum
0.0013 A/channel typical quiescent current
2ns typical pulse width distortion (with 5V supply)
3ns channel-to-channel skew
44000 year barrier life
Excellent magnetic immunity
VDE V 0884-10 certified; UL 1577 recognised
16-pin 0.3″ SOIC package

NVE IL817TE

NVE IL821T-3E

High speed, High-Temperature, DC-correct digital isolators
Multidirectional two channel isolation
High speed at 110 Mbps typical
2.5kV_RMS isolation voltage
600 V_RMS working voltage per VDE V 0884-10
50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
Internal refresher clock to ensure response to DC states of input within 9μs maximum
0.0013 A/channel typical quiescent current
2ns typical pulse width distortion (with 5V supply)
3ns channel-to-channel skew
44000 year barrier life
Excellent magnetic immunity
VDE V 0884-10 certified; UL 1577 recognised
8-pin SOIC package

NVE IL821T-3E

NVE IL821TE

High speed, High-Temperature, DC-correct digital isolators
Multidirectional two channel isolation
High speed at 110 Mbps typical
2.5kV_RMS isolation voltage
600 V_RMS working voltage per VDE V 0884-10
50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
Internal refresher clock to ensure response to DC states of input within 9μs maximum
0.0013 A/channel typical quiescent current
2ns typical pulse width distortion (with 5V supply)
3ns channel-to-channel skew
44000 year barrier life
Excellent magnetic immunity
VDE V 0884-10 certified; UL 1577 recognised
16-pin 0.3″ SOIC package

NVE IL821TE

P1086

InterFET P1086 P-Channel JFET with P0099F Geometry. Typical leakage of 5pA and a low input capacitance of 45pF (max). All of this in a TO-92 package.

P1086

PAD1

InterFET PAD1 N-Channel PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a TO-18 package.

PAD1

PN4117

InterFET PN4117 N-Channel JFET with N0001H Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a TO-92 package.

PN4117

PN4117A

InterFET PN4117A N-Channel JFET with N0001H Geometry. Maximum leakage of -1pA and a low input capacitance of 3pF (max). All of this in a TO-92 package.

PN4117A

Resi APLR Series

High energy anti-pulse resistor with up to 1000J capability, 6W power rating and non-inductive design for high-voltage and transient applications.

APLR1000XXXXXSX

Resi HVLR Series

High voltage thick film resistor with up to 48kV operating voltage, 1kΩ to 1GΩ resistance range and axial mounting for reliable HV circuit design.

HVLRXXXXXXXXXKX

Resi PTFR Series

Precision thin film chip resistor with 10Ω to 5.1MΩ range, tolerance down to ±0.01% and TCR as low as ±5ppm/℃ for high-stability SMD circuits.

PTFRXXXXXXXXXXX

SMP152

InterFET SMP152 N-Channel JFET with N0132L Geometry. Typical leakage of -4pA and a low input capacitance of 15pF (max). All of this in a SOT-23 package.

SMP152

SMP3971

InterFET SMP3971 N-Channel JFET with N0132S Geometry. Typical leakage of -4pA and a low input capacitance of 25pF (max). All of this in a SOT-23 package.

SMP3971

SMP4092

InterFET SMP4092 N-Channel JFET with N0132S Geometry. Typical leakage of -4pA and a low input capacitance of 16pF (max). All of this in a SOT-23 package.

SMP4092

SMP4117

InterFET SMP4117 N-Channel JFET with N0001H Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.

SMP4117

SMP4117A

InterFET SMP4117A N-Channel JFET with N0001H Geometry. Maximum leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.

SMP4117A

SMP4118

InterFET SMP4118 N-Channel JFET with N0001H Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.

SMP4118

NVE IL817TE

High speed, High-Temperature, DC-correct digital isolators

High speed, High-Temperature, DC-correct digital isolators
Multidirectional four channel isolation (3 transmit, 1 receive)
High speed at 110 Mbps typical
2.5kV_RMS isolation voltage
600 V_RMS working voltage per VDE V 0884-10
50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
Internal refresher clock to ensure response to DC states of input within 9μs maximum
0.0013 A/channel typical quiescent current
2ns typical pulse width distortion (with 5V supply)
3ns channel-to-channel skew
44000 year barrier life
Excellent magnetic immunity
VDE V 0884-10 certified; UL 1577 recognised
16-pin 0.3″ SOIC package

NVE IL821T-3E

High speed, High-Temperature, DC-correct digital isolators

High speed, High-Temperature, DC-correct digital isolators
Multidirectional two channel isolation
High speed at 110 Mbps typical
2.5kV_RMS isolation voltage
600 V_RMS working voltage per VDE V 0884-10
50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
Internal refresher clock to ensure response to DC states of input within 9μs maximum
0.0013 A/channel typical quiescent current
2ns typical pulse width distortion (with 5V supply)
3ns channel-to-channel skew
44000 year barrier life
Excellent magnetic immunity
VDE V 0884-10 certified; UL 1577 recognised
8-pin SOIC package

NVE IL821TE

High speed, High-Temperature, DC-correct digital isolators

High speed, High-Temperature, DC-correct digital isolators
Multidirectional two channel isolation
High speed at 110 Mbps typical
2.5kV_RMS isolation voltage
600 V_RMS working voltage per VDE V 0884-10
50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
Internal refresher clock to ensure response to DC states of input within 9μs maximum
0.0013 A/channel typical quiescent current
2ns typical pulse width distortion (with 5V supply)
3ns channel-to-channel skew
44000 year barrier life
Excellent magnetic immunity
VDE V 0884-10 certified; UL 1577 recognised
16-pin 0.3″ SOIC package

P1086

P-Channel JFET

InterFET P1086 P-Channel JFET with P0099F Geometry. Typical leakage of 5pA and a low input capacitance of 45pF (max). All of this in a TO-92 package.

PAD1

PicoAmp Diode

InterFET PAD1 N-Channel PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a TO-18 package.

PN4117

N-Channel JFET

InterFET PN4117 N-Channel JFET with N0001H Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a TO-92 package.

PN4117A

N-Channel JFET

InterFET PN4117A N-Channel JFET with N0001H Geometry. Maximum leakage of -1pA and a low input capacitance of 3pF (max). All of this in a TO-92 package.

Resi APLR Series

High energy anti-pulse resistor

High energy anti-pulse resistor with up to 1000J capability, 6W power rating and non-inductive design for high-voltage and transient applications.

Resi HVLR Series

Planar Non-inductive Power Resistor

High voltage thick film resistor with up to 48kV operating voltage, 1kΩ to 1GΩ resistance range and axial mounting for reliable HV circuit design.

Resi PTFR Series

High-Stability Precision Thin Film Chip Resistor

Precision thin film chip resistor with 10Ω to 5.1MΩ range, tolerance down to ±0.01% and TCR as low as ±5ppm/℃ for high-stability SMD circuits.

SMP152

N-Channel JFET

InterFET SMP152 N-Channel JFET with N0132L Geometry. Typical leakage of -4pA and a low input capacitance of 15pF (max). All of this in a SOT-23 package.

SMP3971

N-Channel JFET

InterFET SMP3971 N-Channel JFET with N0132S Geometry. Typical leakage of -4pA and a low input capacitance of 25pF (max). All of this in a SOT-23 package.

SMP4092

N-Channel JFET

InterFET SMP4092 N-Channel JFET with N0132S Geometry. Typical leakage of -4pA and a low input capacitance of 16pF (max). All of this in a SOT-23 package.

SMP4117

N-Channel JFET

InterFET SMP4117 N-Channel JFET with N0001H Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.

SMP4117A

N-Channel JFET

InterFET SMP4117A N-Channel JFET with N0001H Geometry. Maximum leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.

SMP4118

N-Channel JFET

InterFET SMP4118 N-Channel JFET with N0001H Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.

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