Motion Control

Isabellenhütte’s innovative solution for battery management system applications – the IsaSCALE IVT-S is a plug-and-play module for precise current and voltage measurement in package fitting into palm of your hand.

Magnetic sensors, digital isolators and low power switch sensors based on spintronic GMR (Giant Magnetoresistance) technology from NVE Corporation, including high temperature models.

Metal clad thick film and wirewould resistors from RARA, including inductive and non-inductive designs, braking resistors.

Range of short- and long sided thin film terminals from Susumu, including models with high power handling capacity, models suppressing the surface temperature and others.

Motion Control

  • NVE

NVE IL716E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • Compliant
NVE IL716E
  • NVE

NVE IL716T-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package
  • Compliant
NVE IL716T-3E
  • NVE

NVE IL716TE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • Compliant
NVE IL716TE
  • NVE

NVE IL716VE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 6kVRMS isolation voltage
  • 1kVRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • Compliant
NVE IL716VE
  • NVE

NVE IL717-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package
  • Compliant
NVE IL717-3E
  • NVE

NVE IL717E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • Compliant
NVE IL717E
  • NVE

NVE IL717T-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package
  • Compliant
NVE IL717T-3E
  • NVE

NVE IL717TE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • Compliant
NVE IL717TE
  • NVE

NVE IL717VE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 6kVRMS isolation voltage
  • 1kVRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • Compliant
NVE IL717VE
  • NVE

NVE IL721-3E

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package
  • Compliant
NVE IL721-3E
  • NVE

NVE IL721E

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package
  • Compliant
NVE IL721E
  • NVE

NVE IL721T-3E

  • High temperature, high speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 0.3ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package
  • Compliant
NVE IL721T-3E
  • NVE

NVE IL721TE

  • High temperature, high speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 0.3ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package
  • Compliant
NVE IL721TE
  • NVE

NVE IL721VE

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 6 kVRMS isolation voltage
  • 1 kVRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package
  • Compliant
NVE IL721VE
  • NVE

NVE IL810T-1E

  • High speed, High-Temperature, DC-correct digital isolators
  • Single channel isolation
  • High speed at 110 Mbps typical
  • 1kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • Internal refresher clock to ensure response to DC states of input within 9μs maximum
  • 0.0013 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 3ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin MSOP package
  • Compliant
NVE IL810T-1E
  • NVE

NVE IL810T-3E

  • High speed, High-Temperature, DC-correct digital isolators
  • Single channel isolation
  • High speed at 110 Mbps typical
  • 2.5kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • Internal refresher clock to ensure response to DC states of input within 9μs maximum
  • 0.0013 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 3ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin SOIC package
  • Compliant
NVE IL810T-3E

NVE IL716E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL716T-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package

NVE IL716TE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL716VE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 6kVRMS isolation voltage
  • 1kVRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL717-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package

NVE IL717E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL717T-3E

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.15″ SOIC package

NVE IL717TE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL717VE

  • High speed digital isolators
  • Multidirectional four channel isolation
  • High speed at 110 Mbps typical
  • 6kVRMS isolation voltage
  • 1kVRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL721-3E

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package

NVE IL721E

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package

NVE IL721T-3E

  • High temperature, high speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 0.3ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package

NVE IL721TE

  • High temperature, high speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 2.5 kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 0.3ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 16-pin 0.3″ SOIC package

NVE IL721VE

  • High speed digital isolators
  • Multidirectional two channel isolation (reverse pinout)
  • High speed at 110 Mbps typical
  • 6 kVRMS isolation voltage
  • 1 kVRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • No carrier or clock for low EMI emissions and susceptibility
  • 0.0012 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 100ps pulse jitter
  • 2ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin 0.15″ SOIC package

NVE IL810T-1E

  • High speed, High-Temperature, DC-correct digital isolators
  • Single channel isolation
  • High speed at 110 Mbps typical
  • 1kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • Internal refresher clock to ensure response to DC states of input within 9μs maximum
  • 0.0013 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 3ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin MSOP package

NVE IL810T-3E

  • High speed, High-Temperature, DC-correct digital isolators
  • Single channel isolation
  • High speed at 110 Mbps typical
  • 2.5kVRMS isolation voltage
  • 600 VRMS working voltage per VDE V 0884-10
  • 50 kV/μs typical (30 kV/μs minimum) common mode transient immunity
  • Internal refresher clock to ensure response to DC states of input within 9μs maximum
  • 0.0013 A/channel typical quiescent current
  • 2ns typical pulse width distortion (with 5V supply)
  • 3ns channel-to-channel skew
  • 44000 year barrier life
  • Excellent magnetic immunity
  • VDE V 0884-10 certified; UL 1577 recognised
  • 8-pin SOIC package

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