SiC Intelligent Power Modules

  • Cissoid

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid Half-Bridge IGBT Power Module CMT-PLA1BL12300MA
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150°C) (Eoff= 34.5mJ Tj=150°C)
  • Gate charge: QG=2.3μC
  • Operating range -40 to +175°C (Tj)
  • Package : CPAK-EDC
  • Cissoid

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25°C/90°C
  • Low On Resistance of 3.25 mΩ typical
  • Junction Temperature: -40°C to +175°C
  • Compliant
CMT-PLA3SB12340AA

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid IGBT Power Module 1200V / 300A
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ… Read More

Cissoid CMT-PLA3SB12340A

Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous… Read More

Manufacturers

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SiC Intelligent Power Modules