SiC Intelligent Power Modules

  • Cissoid

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid Half-Bridge IGBT Power Module CMT-PLA1BL12300MA
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90ยฐC: 450A) (@ TC=125ยฐC: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150ยฐC) (Eoff= 34.5mJ Tj=150ยฐC)
  • Gate charge: QG=2.3ฮผC
  • Operating range -40 to +175ยฐC (Tj)
  • Package : CPAK-EDC
  • Cissoid

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid IGBT Power Module 1200V / 300A
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90ยฐC: 450A) (@ TC=125ยฐC: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150ยฐC) (Eoff= 34.5mJ Tj=150ยฐC)
  • Gate charge: QG=2.3ฮผC
  • Operating range -40 to +175ยฐC (Tj)
  • Package : CPAK-EDC

Cissoid CMT-PLA3SB12340A

Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC

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SiC Intelligent Power Modules