Working alongside your design team from the earliest stage, we help you select the right part for the application and, where a standard part will not do, develop customised components with our manufacturing partners such as lead length, termination and package size.
The InterFET PAD is constructed from the N0001H geometry and is likened to a JFET with the drain and source shorted together. In this configuration it provides an ultra low leakage diode. This diode connected JFET can obtain leakage current levels below 200 femto-amps (fA) at a Vdg of 20V, or less than 100 fA at a Vdg of 5V which is almost immeasurable.
InterFET offers both single and dual PAD versions in various package configurations. For the SOT-23 package, it is up to the user to short the source and drain pins.
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