![Rhopoint Components Logo Blue/Black (smaller version) [SVG]](https://www.rhopointcomponents.com/wp-content/uploads/2020/09/RC-logo-master.svg){kind=logo}
Please be advised that due to the ongoing supply issues with raw materials affecting the global electronics industry, as well as an increase in orders received by our manufacturing partners, a large number of products are facing increased lead times in recent months. For the latest lead time and stock availability, please contact one of our engineers who will be happy to discuss lead times further and the potential for alternative parts.
PicoAmp Diode series
Supporting Manufacturer Information
- InterFET Application Note 014: Introduction to JFETs
- InterFET Application Note 015: JFET Fundamentals
- InterFET Application Note 016: JFET Implementations
- InterFET Application Note 017: Common Parameters & Equations
- InterFET Application Note 105: Improved Process for Manufacture of Radiation Hard N-Channel JFETs for Detector Electronics
- InterFET Application Note 107: Biasing JFETs to Achieve Zero Drift
- InterFET CTC-020 Soldering Profile
- InterFET CTC-021 Tape & Reel
- InterFET CTC-022 RoHS Compliance
- InterFET CTC-024 REACH Compliance
The InterFET PAD is constructed from the N0001H geometry and is likened to a JFET with the drain and source shorted together. In this configuration it provides an ultra low leakage diode. This diode connected JFET can obtain leakage current levels below 200 femto-amps (fA) at a Vdg of 20V, or less than 100 fA at a Vdg of 5V which is almost immeasurable.
InterFET offers both single and dual PAD versions in various package configurations. For the SOT-23 package, it is up to the user to short the source and drain pins.
InterFET PAD1 N-Channel PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a TO-18 package.
InterFET SMPPAD1 N-Channel PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a SOT-23 package.
