Test and Measurement

Range of standard resistors for calibration purposes from Alpha Electronics and Isabellenhรผtte.

Vast selection of precision and ultra-precision resistors, current sensing shunts and low ohmic resistors and power resistors in various through-hole and surface-mount packages in virtually any resistance value from Alpha Electronics, Caddock, General Resistance, Isabellenhรผtte, Riedon, Susumu and Vishay Foil Resistors.

Range of NTC and PTC thermistors and inrush current limiters from Ametherm.

High quality, high voltage relays handling up to 15kV from Cynergy3.

Data acquisition modules from DGH with number of analog and digital input and output options, offering possibility to easily set up a customised plug-and-play data acquisition system.

Isabellenhรผtte’s innovative solution for battery management system applications – the IsaSCALE IVT-S is a plug-and-play module for precise current and voltage measurement in package fitting into palm of your hand.

Robust, high quality general purpose and precision load cells in range of packages by Lord Sensing Stellar Technology.

Variety of magnetic sensors and digital isolators from NVE Corporation based on their patented spintronic GMR technology.

Test and Measurement

  • InterFET

J271

InterFET Product Image (TO-92)
InterFET J271 P-Channel JFET with P0099F Geometry. Typical leakage of 5pA and a low input capacitance of 30pF (max). All of this in a TO-92 package.
  • InterFET

J304

InterFET Product Image (TO-92)
InterFET J304 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All of this in a TO-92 package.
  • InterFET

J305

InterFET Product Image (TO-92)
InterFET J305 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All of this in a TO-92 package.
  • InterFET

J309

InterFET Product Image (TO-92)
InterFET J309 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a TO-92 package.
  • InterFET

J310

InterFET Product Image (TO-92)
InterFET J310 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a TO-92 package.
  • InterFET

J507

InterFET Product Image (TO-92-2L)
InterFET J507 N-Channel Current Regulator Diode with N0016H Geometry. Typical leakage of -1.5pA. All of this in a TO-92-2L package.
  • Merit Sensor

Merit Sensor S Series

  • Precision MEMS silicon pressure sensor die
  • Pressure ranges of 5 to 300psi / 0.34 to 21 bar
  • Pressure type of absolute or gauge
  • Temperature range โˆ’40ยฐC to +150ยฐC
  • Full scale outputs from 60mV to 180mV (at 5V excitation)
  • Suitable for clean, dry air and non-corrosive gases media
  • โ€‹Metis Engineering Ltd

Metis Engineering Cell Guard

Cell Guard is a CAN-based environmental sensor for use with Battery Packs in Energy Storage Systems and Electric Vehicles. It measures absolute pressure, air temperature, VOCs, absolute humidity, relative humidity, dew point temperature, and shock load and duration.

For quick desktop analysis, use alongside the Nano Development Kit.

  • โ€‹Metis Engineering Ltd

Nano Development Kit

Nano development kit board top view

The Nano Development Kit can be used alongside 3 environmental sensors: Cell Guard, H Guard and Air Wise. In order to quickly plug in and evaluate your sensor, use this Development Board which has all the necessary cables to plug into a CAN adaptor.

Includes:

  • Development Board
  • Power Supply
  • Sensor Cables
  • DB9 Cable
 

Sensors not included

 
  • NVE

NVE ACT001-10E

  • TMR isolated current sensor
  • Low current detection & measurement
  • On-chip current strap for precise operation
  • Linear range of โˆ’500mA to +500mA
  • Sensitivity of 0.04 V/V-mA
  • Ultraminiature DFN6 Package
  • NVE

NVE AD004-00E

NVE AD Series GMR Switches
  • Omnipolar digital Giant Magnetoresistive (GMR) switch sensor
  • Operates at a magnetic field strength of 2 mT
  • Supply voltage range: 4.5 V to 30 V
  • Low supply current: 1.8 mA
  • High-frequency response up to 250 kHz
  • Compact MSOP8 surface-mount package
  • NVE

NVE AHT922-01

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 4.5mT
  • NVE

NVE AHT922-14E

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 4.5mT
  • NVE

NVE AHT923-01

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 3.2mT
  • NVE

NVE AHT923-14E

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 3.2mT
  • NVE

NVE AHT924-01

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 2.2mT

J271

P-Channel JFET
InterFET J271 P-Channel JFET with P0099F Geometry. Typical leakage of 5pA and a low input capacitance of 30pF (max). All… Read More

J304

N-Channel JFET
InterFET J304 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All… Read More

J305

N-Channel JFET
InterFET J305 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All… Read More

J309

N-Channel JFET
InterFET J309 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All… Read More

J310

N-Channel JFET
InterFET J310 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All… Read More

J507

Current Regulator Diode
InterFET J507 N-Channel Current Regulator Diode with N0016H Geometry. Typical leakage of -1.5pA. All of this in a TO-92-2L package…. Read More

Merit Sensor S Series

Accurate & Stable Pressure MEMS Silicon Piezoresistive Pressure Sensor
  • Precision MEMS silicon pressure sensor die
  • Pressure ranges of 5 to 300psi / 0.34 to 21 bar
  • Pressure type… Read More

Metis Engineering Cell Guard

Environment Sensor for Battery Safety and Monitoring.

Cell Guard is a CAN-based environmental sensor for use with Battery Packs in Energy Storage Systems and Electric Vehicles…. Read More

Nano Development Kit

Sensors Development Kit

The Nano Development Kit can be used alongside 3 environmental sensors: Cell Guard, H Guard and Air… Read More

NVE ACT001-10E

ACT001-10E TMR Isolated current sensor
  • TMR isolated current sensor
  • Low current detection & measurement
  • On-chip current strap for precise operation
  • Linear range of โˆ’500mA… Read More

NVE AD004-00E

Omnipolar digital GMR switch sensor
  • Omnipolar digital Giant Magnetoresistive (GMR) switch sensor
  • Operates at a magnetic field strength of 2 mT
  • … Read More

NVE AHT922-01

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT922-14E

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT923-01

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT923-14E

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT924-01

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

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