We’re Exhibiting at Space Tech Europe 2025

Space Tech Expo Europe, 18-20th November 2025, Bremen, Germany, Stand G56

Cissoid

  • Cissoid

Cissoid CMT-PLA1BK12300M IGBT Power Module

Cissoid CMT-PLA1BK12300MA 1200V/300A half-bridge IGBT Power Module
  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25°C) (VCE(sat)= 1.78V @ IC=300A, Tj=150°C)
  • Low Switching Energy (Eon= 32mJ at Tj=150°C) (Eoff= 39.6mJ Tj=150°C)
  • Gate charge: QG=2.25μC
  • Operating range -40 to +175°C (Tj)
  • Package: CPAK-62
  • Cissoid

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid Half-Bridge IGBT Power Module CMT-PLA1BL12300MA
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150°C) (Eoff= 34.5mJ Tj=150°C)
  • Gate charge: QG=2.3μC
  • Operating range -40 to +175°C (Tj)
  • Package : CPAK-EDC
  • Cissoid

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25°C/90°C
  • Low On Resistance of 3.25 mΩ typical
  • Junction Temperature: -40°C to +175°C
  • Compliant
  • Cissoid

Cissoid CXT-PLA3BG07820R IGBT Power Module

SIC Power Module from Cissoid CXT-PLA3BG07820R
  • Max Collector Voltage:  750V
  • Implemented Collector Current: 820A
  • DC Collector Current @ TF=80°C: 450A
  • Low Saturation Voltage (VCE(sat)= 1.15V @ IC=450A, Tj=25°C) (VCE(sat)= 1.25V @ IC=450A, Tj=175°C)
  • Low Switching Energy (Eon= 16.8mJ at Tj=25°C) (Eoff= 15.7mJ Tj=25°C)
  • Operating range -40 to +175°C (Tj)

Cissoid CMT-PLA1BK12300M IGBT Power Module

  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25°C) (VCE(sat)= 1.78V @ IC=300A, Tj=150°C)
  • Low Switching Energy (Eon= 32mJ at Tj=150°C) (Eoff= 39.6mJ Tj=150°C)
  • Gate charge: QG=2.25μC
  • Operating range -40 to +175°C (Tj)
  • Package: CPAK-62

Cissoid CMT-PLA1BL12300MA IGBT Power Module

  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150°C) (Eoff= 34.5mJ Tj=150°C)
  • Gate charge: QG=2.3μC
  • Operating range -40 to +175°C (Tj)
  • Package : CPAK-EDC

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25°C/90°C
  • Low On Resistance of 3.25 mΩ typical
  • Junction Temperature: -40°C to +175°C

Cissoid CXT-PLA3BG07820R IGBT Power Module

  • Max Collector Voltage:  750V
  • Implemented Collector Current: 820A
  • DC Collector Current @ TF=80°C: 450A
  • Low Saturation Voltage (VCE(sat)= 1.15V @ IC=450A, Tj=25°C) (VCE(sat)= 1.25V @ IC=450A, Tj=175°C)
  • Low Switching Energy (Eon= 16.8mJ at Tj=25°C) (Eoff= 15.7mJ Tj=25°C)
  • Operating range -40 to +175°C (Tj)
Authorised Partner

About Cissoid

CISSOID are leaders in high-temperature semiconductor solutions, delivering standard products and custom solutions in extreme temperature and harsh environments. These solutions include:

  • Power Management
  • Power Conversion
  • Signal Conditioning

CISSOID provides high-reliability products guaranteed from -55 °C to +225 °C and commonly used outside that range, from cryogenic lows to upper extremes.

Whether the ambient temperature is low but the power dissipation heats up the chips, or in high-temperature environments, these products enable energy, weight and cost savings in lighter, cooling-free and more compact electronic systems. They are used in mission-critical systems as well as in applications requiring long term reliability. CISSOID products are supplied to a number of leaders in the Oil & Gas, Aeronautics, Industrial and Automotive markets.

For their official website, please visit www.cissoid.com