Supporting Manufacturer Information

2525 series

  • SRT Microcรฉramique

SMD High Temperature Class I Capacitors

  • High Temperature Class I SMD Capacitor
  • Capacitance from 0.1pF to 330nF
  • Voltages from 10V to 2000V
  • Ultra stable temperature compensating classe I ceramic up to 250ยฐC
  • Tested in accordance to CECC 32100 and AEC-Q200
  • Custom voltage, package size, capacitance value on reques
  • SRT Microcรฉramique

SRT Microcรฉramique RF Power High Frequency Capacitor Series

NP0 Capacitor Series | High Voltage | SRT Microcรฉramique
  • MLCC RF power, high frequency capacitors for RF instruments, lasers and similar applications
  • Highest quality and reliability, suitable for safety-critical industries
  • Dissipation factor under 5.10-4 at 1Vrms and 1MHz for values โ‰ค 1000pF and under 5.10-4 at 1Vrms and 1KHz for values > 1000pF
  • Insulation resistance of 25ยฐC/Un 105 Mฮฉ or 1000 Ohm-Farad whichever is less and 125ยฐC/Un 104 Mฮฉ or 100 Ohm-Farad whichever is less
  • Dielectric strength test performed per method 103 of EIA 198-2-E
  • Susumu

Susumu HPT Series

  • Surface-mount high power thin film chip terminator
  • Rated operating temperature of +100ยฐC at terminal
  • Wrap around terminals for easy and reliable soldering
  • Aluminum nitride substrate
  • Efficient heat dissipation

SMD High Temperature Class I Capacitors

  • High Temperature Class I SMD Capacitor
  • Capacitance from 0.1pF to 330nF
  • Voltages from 10V to 2000V
  • Ultra stable temperature compensating classe I ceramic up to 250ยฐC
  • Tested in accordance to CECC 32100 and AEC-Q200
  • Custom voltage, package size, capacitance value on reques

SRT Microcรฉramique RF Power High Frequency Capacitor Series

  • MLCC RF power, high frequency capacitors for RF instruments, lasers and similar applications
  • Highest quality and reliability, suitable for safety-critical industries
  • Dissipation factor under 5.10-4 at 1Vrms and 1MHz for values โ‰ค 1000pF and under 5.10-4 at 1Vrms and 1KHz for values > 1000pF
  • Insulation resistance of 25ยฐC/Un 105 Mฮฉ or 1000 Ohm-Farad whichever is less and 125ยฐC/Un 104 Mฮฉ or 100 Ohm-Farad whichever is less
  • Dielectric strength test performed per method 103 of EIA 198-2-E

Susumu HPT Series

  • Surface-mount high power thin film chip terminator
  • Rated operating temperature of +100ยฐC at terminal
  • Wrap around terminals for easy and reliable soldering
  • Aluminum nitride substrate
  • Efficient heat dissipation

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