The CMT-PLA3SB12340AA is a Silicon Carbide (SiC) Power Module from Cissoid, engineered for highly efficient power conversion in demanding applications.
It is a 3-phase, 1200V/340A SiC MOSFET intelligent power module that integrates power switches and a gate driver based on the CISSOID HADES2 chipset. The module is cooled using a lightweight AlSiC flat baseplate, making it ideal for high-power-density converters. It is designed to operate at junction temperatures of up to 175ยฐC, ensuring reliable performance in harsh environments.
This solution provides significant advantages over traditional IGBT modules by fully utilising SiC technology, offering:
High Efficiency: The low switching losses of SiC reduce heat generation, enhancing overall power efficiency.
High Power Density: The compact design allows for a smaller footprint, optimising system architecture.
High Reliability: Operation at elevated temperatures improves durability, particularly for industrial and automotive applications.
The integration of the gate driver with the power module delivers a fully validated and optimised solution. It ensures faster switching speeds, minimises losses, and provides robustness against dI/dt and dV/dt. Additionally, the module includes built-in protection features such as:
These features make the CMT-PLA3SB12340AA ideal for high-power applications requiring robust, efficient, and reliable power management solutions.
Automotive Industry: Electric and hybrid vehicle powertrains, High-power battery chargers
Renewable Energy: Solar inverters, Wind turbine power systems, Energy storage systems
Industrial Sector: Industrial motor drives, High-efficiency switch mode power supplies (SMPS), Uninterruptible power supplies (UPS)
Aerospace and Defence: Power systems for avionics and defence equipment, High-temperature power conversion for extreme environments
Rail and Marine Transportation: Traction inverters for rail systems, Marine propulsion systems
Oil & Gas Exploration: High-temperature power conversion for drilling and exploration equipment
These applications span across industries that demand high efficiency, reliability, and thermal robustness in power conversion systems.
Cissoid is a leading provider of high-temperature and high-reliability semiconductor solutions, specialising in power management for industrial, automotive, and aerospace applications. They focus on delivering efficient, robust, and durable silicon carbide (SiC) and silicon-based products. For more information, visit their website https://www.cissoid.com/.
Weight | .550 kg |
---|---|
Dimensions | 34 x 104 x 154mm |
Product Type | |
VDS Breakdown Voltage | 1200V |
Low Rdson | 3.25mฮฉ (typical), 4mฮฉ (max) |
Maximum Continuous Current | 340A typ. @ Tc=25ยฐC, 295A typ. @ Tc=90ยฐC |
Thermal resistance | 0.183 ยฐC/W (typical) |
Junction Operating Temperature | 175ยฐC (max) |
Switching Energy | Eon: 8.42 mJ (@600V/300A), Eoff: 7.05 mJ (@600V/300A) |
Switching Frequency | 50kHz (max) * |
Isolation Voltage | 3000VDC (1 min, primary โ secondary), 5000VDC (1 min, baseplate โ power pins) |
Common mode transient immunity | >50kV/ยตs |
Supply Voltage | 12 to 18V (VCC) |
Temperature Range (ยฐC) | -40 to +150ยฐC |
Parasitic Capacitance | 11pF per phase (typical) |
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