Silicon Carbide (SiC) MOSFET Intelligent Power Module

Cissoid CMT-PLA3SB12340A

  • Silicon Carbide (SiC) MOSFET Intelligent Power Module
  • 3-phase inverter with anti-parallel diodes
  • Drain-to-source Breakdown Voltage of 1200V
  • Max Continuous Current of 340A/260A at Tc=25ยฐC/90ยฐC
  • Low On Resistance of 3.25 mฮฉ typical
  • Junction Temperature: -40ยฐC to +175ยฐC
  • Compliant

The CMT-PLA3SB12340AA is a Silicon Carbide (SiC) Power Module from Cissoid, engineered for highly efficient power conversion in demanding applications.

It is a 3-phase, 1200V/340A SiC MOSFET intelligent power module that integrates power switches and a gate driver based on the CISSOID HADES2 chipset. The module is cooled using a lightweight AlSiC flat baseplate, making it ideal for high-power-density converters. It is designed to operate at junction temperatures of up to 175ยฐC, ensuring reliable performance in harsh environments.

This solution provides significant advantages over traditional IGBT modules by fully utilising SiC technology, offering:

High Efficiency: The low switching losses of SiC reduce heat generation, enhancing overall power efficiency.
High Power Density: The compact design allows for a smaller footprint, optimising system architecture.
High Reliability: Operation at elevated temperatures improves durability, particularly for industrial and automotive applications.

The integration of the gate driver with the power module delivers a fully validated and optimised solution. It ensures faster switching speeds, minimises losses, and provides robustness against dI/dt and dV/dt. Additionally, the module includes built-in protection features such as:

  • Desaturation protection (Desat)
  • Soft Shutdown (SSD)
  • Negative gate drive (-3V)
  • Active Miller Clamping (AMC)
  • Gate-Source Short-circuit Protection
  • Open-drain fault reporting (per side or per phase)
  • Turn-On/Off delay: 180ns (typical)
  • Under-voltage lockout (UVLO) on VCC and internally generated secondary supplies

These features make the CMT-PLA3SB12340AA ideal for high-power applications requiring robust, efficient, and reliable power management solutions.

Typical Applications for the CMT-PLA3SB12340AA include:

Automotive Industry: Electric and hybrid vehicle powertrains, High-power battery chargers
Renewable Energy: Solar inverters, Wind turbine power systems, Energy storage systems
Industrial Sector: Industrial motor drives, High-efficiency switch mode power supplies (SMPS), Uninterruptible power supplies (UPS)
Aerospace and Defence: Power systems for avionics and defence equipment, High-temperature power conversion for extreme environments
Rail and Marine Transportation: Traction inverters for rail systems, Marine propulsion systems
Oil & Gas Exploration: High-temperature power conversion for drilling and exploration equipment

These applications span across industries that demand high efficiency, reliability, and thermal robustness in power conversion systems.

Cissoid is a leading provider of high-temperature and high-reliability semiconductor solutions, specialising in power management for industrial, automotive, and aerospace applications. They focus on delivering efficient, robust, and durable silicon carbide (SiC) and silicon-based products. For more information, visit their website https://www.cissoid.com/.

Specifications

Weight .550 kg
Dimensions 34 x 104 x 154mm
Product Type

VDS Breakdown Voltage

1200V

Low Rdson

3.25mฮฉ (typical), 4mฮฉ (max)

Maximum Continuous Current

340A typ. @ Tc=25ยฐC, 295A typ. @ Tc=90ยฐC

Thermal resistance

0.183 ยฐC/W (typical)

Junction Operating Temperature

175ยฐC (max)

Switching Energy

Eon: 8.42 mJ (@600V/300A), Eoff: 7.05 mJ (@600V/300A)

Switching Frequency

50kHz (max) *

Isolation Voltage

3000VDC (1 min, primary โ€“ secondary), 5000VDC (1 min, baseplate โ€“ power pins)

Common mode transient immunity

>50kV/ยตs

Supply Voltage

12 to 18V (VCC)

Temperature Range (ยฐC)

-40 to +150ยฐC

Parasitic Capacitance

11pF per phase (typical)

* With Gate driver temperature derating from 25KHz to 50KHz (see curve at page 17 of the datasheet)

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