Scientific Instrumentation

A wide range of precision and ultra-precision resistors from Alpha Electronics, General Resistance and Susumu, power resistors from Caddock and current sensing resistors and shunts from Isabellenhütte in a variety surface-mount and through-hole packages and virtually any resistance value.

Variety of NTC and PTC thermistors, thermal probes and inrush current limiters from Ametherm.

A range of digital isolators from NVE Corporation, based on their patented spintronic GMR technology.

Scientific Instrumentation

  • InterFET

J271

InterFET Product Image (TO-92)
InterFET J271 P-Channel JFET with P0099F Geometry. Typical leakage of 5pA and a low input capacitance of 30pF (max). All of this in a TO-92 package.
  • Compliant
J271
  • InterFET

J304

InterFET Product Image (TO-92)
InterFET J304 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All of this in a TO-92 package.
  • Compliant
J304
  • InterFET

J305

InterFET Product Image (TO-92)
InterFET J305 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All of this in a TO-92 package.
  • Compliant
J305
  • InterFET

J309

InterFET Product Image (TO-92)
InterFET J309 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a TO-92 package.
  • Compliant
J309
  • InterFET

J310

InterFET Product Image (TO-92)
InterFET J310 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a TO-92 package.
  • Compliant
J310
  • InterFET

J507

InterFET Product Image (TO-92-2L)
InterFET J507 N-Channel Current Regulator Diode with N0016H Geometry. Typical leakage of -1.5pA. All of this in a TO-92-2L package.
  • Compliant
J507
  • ​Metis Engineering Ltd

Metis Engineering Cell Guard

Cell Guard is a CAN-based environmental sensor for use with Battery Packs in Energy Storage Systems and Electric Vehicles. It measures absolute pressure, air temperature, VOCs, absolute humidity, relative humidity, dew point temperature, and shock load and duration.

For quick desktop analysis, use alongside the Nano Development Kit.

  • ​Metis Engineering Ltd

Nano Development Kit

Nano development kit board top view

The Nano Development Kit can be used alongside 3 environmental sensors: Cell Guard, H Guard and Air Wise. In order to quickly plug in and evaluate your sensor, use this Development Board which has all the necessary cables to plug into a CAN adaptor.

Includes:

  • Development Board
  • Power Supply
  • Sensor Cables
  • DB9 Cable
 

Sensors not included

 
  • NVE

NVE ACT001-10E

  • TMR isolated current sensor
  • Low current detection & measurement
  • On-chip current strap for precise operation
  • Linear range of −500mA to +500mA
  • Sensitivity of 0.04 V/V-mA
  • Ultraminiature DFN6 Package
  • Compliant
NVE ACT001-10E
  • NVE

NVE AHT922-01

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 4.5mT
  • Compliant
NVE AHT922-01
  • NVE

NVE AHT922-14E

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 4.5mT
  • Compliant
NVE AHT922-14E
  • NVE

NVE AHT923-01

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 3.2mT
  • Compliant
NVE AHT923-01
  • NVE

NVE AHT923-14E

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 3.2mT
  • Compliant
NVE AHT923-14E
  • NVE

NVE AHT924-01

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 2.2mT
  • Compliant
NVE AHT924-01
  • NVE

NVE AHT924-14E

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 2.2mT
  • Compliant
NVE AHT924-14E
  • NVE

NVE AHT925-01

  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output is activated if magnetic field of either polarity is applied
  • Continuous operation for low noise and high-speed
  • Ultrasensitive operate point, as low as 1.5mT
  • Compliant
NVE AHT925-01

J271

P-Channel JFET
InterFET J271 P-Channel JFET with P0099F Geometry. Typical leakage of 5pA and a low input capacitance of 30pF (max). All… Read More

J304

N-Channel JFET
InterFET J304 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All… Read More

J305

N-Channel JFET
InterFET J305 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All… Read More

J309

N-Channel JFET
InterFET J309 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All… Read More

J310

N-Channel JFET
InterFET J310 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All… Read More

J507

Current Regulator Diode
InterFET J507 N-Channel Current Regulator Diode with N0016H Geometry. Typical leakage of -1.5pA. All of this in a TO-92-2L package…. Read More

Metis Engineering Cell Guard

Environment Sensor for Battery Safety and Monitoring.

Cell Guard is a CAN-based environmental sensor for use with Battery Packs in Energy Storage Systems and Electric Vehicles…. Read More

Nano Development Kit

Sensors Development Kit

The Nano Development Kit can be used alongside 3 environmental sensors: Cell Guard, H Guard and Air… Read More

NVE ACT001-10E

ACT001-10E TMR Isolated current sensor
  • TMR isolated current sensor
  • Low current detection & measurement
  • On-chip current strap for precise operation
  • Linear range of −500mA… Read More

NVE AHT922-01

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT922-14E

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT923-01

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT923-14E

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT924-01

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT924-14E

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

NVE AHT925-01

Low voltage, nanopower TMR digital switch
  • Low voltage, nanopower TMR digital switch
  • In-plane direction of sensitivity
  • Omnipolar – output… Read More

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