Motion Control

Isabellenhütte’s innovative solution for battery management system applications – the IsaSCALE IVT-S is a plug-and-play module for precise current and voltage measurement in package fitting into palm of your hand.

Magnetic sensors, digital isolators and low power switch sensors based on spintronic GMR (Giant Magnetoresistance) technology from NVE Corporation, including high temperature models.

Metal clad thick film and wirewould resistors from RARA, including inductive and non-inductive designs, braking resistors.

Range of short- and long sided thin film terminals from Susumu, including models with high power handling capacity, models suppressing the surface temperature and others.

Motion Control

  • InterFET

2N6550

InterFET Product Image (TO-46)
InterFET 2N6550 N-Channel JFET with N0450L Geometry. Typical leakage of -6pA and a low input capacitance of 35pF (max). All of this in a TO-46 package.
  • Compliant
2N6550
  • Cissoid

Cissoid CMT-PLA1BK12300M IGBT Power Module

Cissoid CMT-PLA1BK12300MA 1200V/300A half-bridge IGBT Power Module
  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25°C) (VCE(sat)= 1.78V @ IC=300A, Tj=150°C)
  • Low Switching Energy (Eon= 32mJ at Tj=150°C) (Eoff= 39.6mJ Tj=150°C)
  • Gate charge: QG=2.25μC
  • Operating range -40 to +175°C (Tj)
  • Package: CPAK-62
  • Cissoid

Cissoid CMT-PLA1BL12300MA IGBT Power Module

Cissoid Half-Bridge IGBT Power Module CMT-PLA1BL12300MA
  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150°C) (Eoff= 34.5mJ Tj=150°C)
  • Gate charge: QG=2.3μC
  • Operating range -40 to +175°C (Tj)
  • Package : CPAK-EDC
  • Core Sensors

Core Sensors CS11 Series

  • Compact media isolated pressure sensor
  • Pressure ranges from 0-2 up to 2,000 PSI
  • Accuracy as low as ≤ ±0.25% BFSL
  • Stability of ≤ ±0.2% of FS (1 year)
  • Pressure cycles of 10 million
  • Overpressure of 2x minimum
  • Burst pressure of 5x or 4,000 PSI
  • Compliant
Core Sensors CS11
  • Core Sensors

Core Sensors CS50 Series

  • Non-incendive pressure transducer
  • Pressure ranges from 50 PSI to 30,000 PSI
  • Accuracy of ≤±0.25% BFSL at 25°C
  • Stability of ≤±0.25% of FS
  • Pressure cycles of 100 million
  • Overpressure of 2x minimum
  • Burst pressure of 5x or 60,000 PSI
  • Compliant
Core Sensors CS50
  • Core Sensors

Core Sensors CS51 Series

  • Non-incendive low pressure transducer
  • Pressure ranges from 1 PSI up to 49 PSI
  • Temperature range from −20°C up to +80°C *
  • Accuracy of ≤±0.25% BFSL at 25°C **
  • Stability of ≤±0.25% of FS (1 year)
  • Pressure cycles of 100 million
  • Overpressure of 2x minimum
  • Compliant
Core Sensors CS51
  • Core Sensors

Core Sensors CS82 Series

  • Intrinsically safe submersible pressure transducer
  • Pressure ranges from 1 PSI up to 50 PSI
  • Accuracy of ≤±0.25% BFSL
  • Stability of ≤±0.25% of FS (1 year)
  • Pressure cycles of 50 million
  • Overpressure of 2x minimum
  • Burst pressure of 5x or 250 PSI
  • Compliant
Core Sensors CS82
  • InterFET

DPAD1

InterFET Product Image (TO-72)
InterFET DPAD1 N-Channel Dual PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a TO-72 package.
  • Compliant
DPAD1
  • DTPM

DTPM Adaptor Board AB126/127 Assembly

  • Adaptor Board AB126/127 with SMD resistors
  • Resistance ranges from 0.0068Ω to 3.9Ω *
  • Tolerances of 0.5% and 1%
  • Power Rating of 5W
  • Compliant
AB126/127
  • DTPM

DTPM Adaptor Board AB129 Assembly

  • Adaptor Board AB129 with SMD resistors
  • Resistance ranges from 0.001Ω to 1Ω *
  • Tolerances of 0.5% and 1%
  • Power Rating of 4W
  • Compliant
DTPM - AB129
  • InterFET

IF1320ST3

InterFET Product Image (SOT-23)
InterFET IF1320ST3 N-Channel JFET with N0132L Geometry. Typical leakage of -4pA and a low input capacitance of 20pF (max). All of this in a SOT-23 package.
  • Compliant
IF1320ST3
  • InterFET

IF1322AS08

InterFET Product Image (SOIC-8)
InterFET IF1322AS08 N-Channel Dual Matched JFET with N0132L Geometry. Typical leakage of -4pA and a low input capacitance of 15pF (max). All of this in a SOIC-8 package.
  • Compliant
IF1322AS08
  • InterFET

IF1322S08

InterFET Product Image (SOIC-8)
InterFET IF1322S08 N-Channel Dual Matched JFET with N0132L Geometry. Typical leakage of -4pA and a low input capacitance of 15pF (max). All of this in a SOIC-8 package.
  • Compliant
IF1322S08
  • InterFET

IF140AST3

InterFET Product Image (SOT-23)
InterFET IF140AST3 N-Channel JFET with N0014L Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.
  • Compliant
IF140AST3
  • InterFET

IF140AT72

InterFET Product Image (TO-72)
InterFET IF140AT72 N-Channel JFET with N0014L Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a TO-72 package.
  • Compliant
IF140AT72
  • InterFET

IF140ST3

InterFET Product Image (SOT-23)
InterFET IF140ST3 N-Channel JFET with N0014L Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.
  • Compliant
IF140ST3

2N6550

InterFET 2N6550 N-Channel JFET with N0450L Geometry. Typical leakage of -6pA and a low input capacitance of 35pF (max). All of this in a TO-46 package.
InterFET Product Image (TO-46)

Cissoid CMT-PLA1BK12300M IGBT Power Module

  • Max Collector Voltage: 1200V
  • Low Saturation Voltage (VCE(sat)= 1.56V @ IC=300A, Tj=25°C) (VCE(sat)= 1.78V @ IC=300A, Tj=150°C)
  • Low Switching Energy (Eon= 32mJ at Tj=150°C) (Eoff= 39.6mJ Tj=150°C)
  • Gate charge: QG=2.25μC
  • Operating range -40 to +175°C (Tj)
  • Package: CPAK-62
Cissoid CMT-PLA1BK12300MA 1200V/300A half-bridge IGBT Power Module

Cissoid CMT-PLA1BL12300MA IGBT Power Module

  • Max Collector Voltage: 1200V
  • DC Collector Current (@ TC=90°C: 450A) (@ TC=125°C: > 300A)
  • Low Switching Energy: (Eon= 34mJ at Tj=150°C) (Eoff= 34.5mJ Tj=150°C)
  • Gate charge: QG=2.3μC
  • Operating range -40 to +175°C (Tj)
  • Package : CPAK-EDC
Cissoid Half-Bridge IGBT Power Module CMT-PLA1BL12300MA

Core Sensors CS11 Series

  • Compact media isolated pressure sensor
  • Pressure ranges from 0-2 up to 2,000 PSI
  • Accuracy as low as ≤ ±0.25% BFSL
  • Stability of ≤ ±0.2% of FS (1 year)
  • Pressure cycles of 10 million
  • Overpressure of 2x minimum
  • Burst pressure of 5x or 4,000 PSI

Core Sensors CS50 Series

  • Non-incendive pressure transducer
  • Pressure ranges from 50 PSI to 30,000 PSI
  • Accuracy of ≤±0.25% BFSL at 25°C
  • Stability of ≤±0.25% of FS
  • Pressure cycles of 100 million
  • Overpressure of 2x minimum
  • Burst pressure of 5x or 60,000 PSI

Core Sensors CS51 Series

  • Non-incendive low pressure transducer
  • Pressure ranges from 1 PSI up to 49 PSI
  • Temperature range from −20°C up to +80°C *
  • Accuracy of ≤±0.25% BFSL at 25°C **
  • Stability of ≤±0.25% of FS (1 year)
  • Pressure cycles of 100 million
  • Overpressure of 2x minimum

Core Sensors CS82 Series

  • Intrinsically safe submersible pressure transducer
  • Pressure ranges from 1 PSI up to 50 PSI
  • Accuracy of ≤±0.25% BFSL
  • Stability of ≤±0.25% of FS (1 year)
  • Pressure cycles of 50 million
  • Overpressure of 2x minimum
  • Burst pressure of 5x or 250 PSI

DPAD1

InterFET DPAD1 N-Channel Dual PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a TO-72 package.
InterFET Product Image (TO-72)

DTPM Adaptor Board AB126/127 Assembly

  • Adaptor Board AB126/127 with SMD resistors
  • Resistance ranges from 0.0068Ω to 3.9Ω *
  • Tolerances of 0.5% and 1%
  • Power Rating of 5W

DTPM Adaptor Board AB129 Assembly

  • Adaptor Board AB129 with SMD resistors
  • Resistance ranges from 0.001Ω to 1Ω *
  • Tolerances of 0.5% and 1%
  • Power Rating of 4W

IF1320ST3

InterFET IF1320ST3 N-Channel JFET with N0132L Geometry. Typical leakage of -4pA and a low input capacitance of 20pF (max). All of this in a SOT-23 package.
InterFET Product Image (SOT-23)

IF1322AS08

InterFET IF1322AS08 N-Channel Dual Matched JFET with N0132L Geometry. Typical leakage of -4pA and a low input capacitance of 15pF (max). All of this in a SOIC-8 package.
InterFET Product Image (SOIC-8)

IF1322S08

InterFET IF1322S08 N-Channel Dual Matched JFET with N0132L Geometry. Typical leakage of -4pA and a low input capacitance of 15pF (max). All of this in a SOIC-8 package.
InterFET Product Image (SOIC-8)

IF140AST3

InterFET IF140AST3 N-Channel JFET with N0014L Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.
InterFET Product Image (SOT-23)

IF140AT72

InterFET IF140AT72 N-Channel JFET with N0014L Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a TO-72 package.
InterFET Product Image (TO-72)

IF140ST3

InterFET IF140ST3 N-Channel JFET with N0014L Geometry. Typical leakage of -1pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.
InterFET Product Image (SOT-23)

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