Supporting Manufacturer Information

±0.1pF series

  • SRT Microcéramique

SRT Microcéramique Radial Capacitor Dipped High Voltage

  • High voltage radial dipped capacitors
  • Capacitance from 0.4pF to 47µF
  • TCR options from ±30ppm/°C (NP0) to ±15% (X7R)
  • Voltages from 1kV to 15kV
  • IR 25°C/Un ≥10⁵MΩ or 1000Ω-Farad whichever is less *
  • Dielectrics: NP0, N2T, BX, 2C1, X7R
  • Operating temperatures from -55°C to +125°C
  • SRT Microcéramique

SRT Microcéramique SMD Low Voltage Class I Capacitors

  • Low Voltage Class I SMD Capacitor
  • Capacitance from 0.1 pF to 820 nF
  • TCR of ± 30ppm with 0Vdc applied
  • Voltages from 10V to 1000V
  • Operating temperatures of -55°C to +125°C
  • Tested in accordance to CECC 32100 and AEC-Q200
  • SRT Microcéramique

SRT Microcéramique SMD Low Voltage N2T Capacitors

SRT Microceramique Low Voltage Class II Capacitor
  • Low Voltage N2T SMD Capacitor
  • Capacitance from 0.3 pF to 1.2 µF
  • TCR of -2200 ± 350 ppm/°C with 0Vdc applied
  • Voltages from 10V to 1000V
  • Operating temperatures of -55°C to +125°C
  • All PME SMD available in non magnetic termination
  • SRT Microcéramique

SRT Microcéramique Chip Capacitors with Negative TC

X7R Capacitor Stack Series | High Capacitance | SRT Microcéramique
  • NP0 (C0G) Chip ceramic capacitor with negative TC
  • Highest quality and reliability, suitable for safety-critical industries
  • Dissipation factor under 10.10-4 at 1Vrms and 1kH (or 1MHz)
  • Insulation resistance of 25°C/Un 105 MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 104 MΩ or 100 Ohm-Farad whichever is less
  • Dielectric strength test performed per method 103 of EIA 198-2-E
  • SRT Microcéramique

SRT Microcéramique High Frequency Capacitor Series

NP0 Capacitor Series | High Voltage | SRT Microcéramique
  • MLCC Capacitor for RF and Microwave communication
  • Highest quality and reliability, suitable for safety-critical industries
  • Dissipation factor under 5.10-4 at 1Vrms and 1MHz for values ≤ 1000pF and under 5.10-4 at 1Vrms and 1KHz for values > 1000pF
  • Insulation resistance of 25°C/Un 105 MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 104 MΩ or 100 Ohm-Farad whichever is less
  • Dielectric strength test performed per method 103 of EIA 198-2-E

SRT Microcéramique Radial Capacitor Dipped High Voltage

  • High voltage radial dipped capacitors
  • Capacitance from 0.4pF to 47µF
  • TCR options from ±30ppm/°C (NP0) to ±15% (X7R)
  • Voltages from 1kV to 15kV
  • IR 25°C/Un ≥10⁵MΩ or 1000Ω-Farad whichever is less *
  • Dielectrics: NP0, N2T, BX, 2C1, X7R
  • Operating temperatures from -55°C to +125°C

SRT Microcéramique SMD Low Voltage Class I Capacitors

  • Low Voltage Class I SMD Capacitor
  • Capacitance from 0.1 pF to 820 nF
  • TCR of ± 30ppm with 0Vdc applied
  • Voltages from 10V to 1000V
  • Operating temperatures of -55°C to +125°C
  • Tested in accordance to CECC 32100 and AEC-Q200

SRT Microcéramique SMD Low Voltage N2T Capacitors

  • Low Voltage N2T SMD Capacitor
  • Capacitance from 0.3 pF to 1.2 µF
  • TCR of -2200 ± 350 ppm/°C with 0Vdc applied
  • Voltages from 10V to 1000V
  • Operating temperatures of -55°C to +125°C
  • All PME SMD available in non magnetic termination

SRT Microcéramique Chip Capacitors with Negative TC

  • NP0 (C0G) Chip ceramic capacitor with negative TC
  • Highest quality and reliability, suitable for safety-critical industries
  • Dissipation factor under 10.10-4 at 1Vrms and 1kH (or 1MHz)
  • Insulation resistance of 25°C/Un 105 MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 104 MΩ or 100 Ohm-Farad whichever is less
  • Dielectric strength test performed per method 103 of EIA 198-2-E

SRT Microcéramique High Frequency Capacitor Series

  • MLCC Capacitor for RF and Microwave communication
  • Highest quality and reliability, suitable for safety-critical industries
  • Dissipation factor under 5.10-4 at 1Vrms and 1MHz for values ≤ 1000pF and under 5.10-4 at 1Vrms and 1KHz for values > 1000pF
  • Insulation resistance of 25°C/Un 105 MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 104 MΩ or 100 Ohm-Farad whichever is less
  • Dielectric strength test performed per method 103 of EIA 198-2-E