Test and Measurement

Range of standard resistors for calibration purposes from Alpha Electronics and Isabellenhütte.

Vast selection of precision and ultra-precision resistors, current sensing shunts and low ohmic resistors and power resistors in various through-hole and surface-mount packages in virtually any resistance value from Alpha Electronics, Caddock, General Resistance, Isabellenhütte, Riedon, Susumu and Vishay Foil Resistors.

Range of NTC and PTC thermistors and inrush current limiters from Ametherm.

High quality, high voltage relays handling up to 15kV from Cynergy3.

Data acquisition modules from DGH with number of analog and digital input and output options, offering possibility to easily set up a customised plug-and-play data acquisition system.

Isabellenhütte’s innovative solution for battery management system applications – the IsaSCALE IVT-S is a plug-and-play module for precise current and voltage measurement in package fitting into palm of your hand.

Robust, high quality general purpose and precision load cells in range of packages by Lord Sensing Stellar Technology.

Variety of magnetic sensors and digital isolators from NVE Corporation based on their patented spintronic GMR technology.

Test and Measurement

SMPJ304

InterFET SMPJ304 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.

Download Datasheet

SMPJ304

SMPJ305

InterFET SMPJ305 N-Channel JFET with N0026S Geometry. Typical leakage of -2pA and a low input capacitance of 3pF (max). All of this in a SOT-23 package.

Download Datasheet

SMPJ305

SMPJ310

InterFET SMPJ310 N-Channel JFET with N0072S Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a SOT-23 package.

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SMPJ310

SMPPAD1

InterFET SMPPAD1 N-Channel PicoAmp Diode with N0001H Geometry. Typical leakage of -0.5pA. All of this in a SOT-23 package.

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SMPPAD1

SMPU308

InterFET SMPU308 N-Channel JFET with N0072L Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a SOT-23 package.

Download Datasheet

SMPU308

SMPU309

InterFET SMPU309 N-Channel JFET with N0072L Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a SOT-23 package.

Download Datasheet

SMPU309

SMPU310

InterFET SMPU310 N-Channel JFET with N0072L Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a SOT-23 package.

Download Datasheet

SMPU310

SMPU311

InterFET SMPU311 N-Channel JFET with N0072L Geometry. Typical leakage of -3pA and a low input capacitance of 5pF (max). All of this in a SOT-23 package.

Download Datasheet

SMPU311

SRT CDV Series

The SRT CDV Series high‑voltage thick film chip resistor dividers in 2512 and 4020 chip sizes offer R1 values up to 1 GΩ, divider ratios to 1000:1 and maximum working voltages up to 4,000 V. Low TCR options, non‑magnetic variants and a no‑organics design support precise operation in demanding high‑voltage and high‑vacuum applications.

Download Datasheet

SRT CDV 4020

SRT Microcéramique Chip Capacitors with Negative TC

NP0 (C0G) Chip ceramic capacitor with negative TC
Highest quality and reliability, suitable for safety-critical industries
Dissipation factor under 10.10^-4 at 1V_rms and 1kH (or 1MHz)
Insulation resistance of 25°C/Un 10⁵ MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 10⁴ MΩ or 100 Ohm-Farad whichever is less
Dielectric strength test performed per method 103 of EIA 198-2-E

SRT Microcéramique

SRT Microcéramique High Frequency Capacitor Series

MLCC Capacitor for RF and Microwave communication
Highest quality and reliability, suitable for safety-critical industries
Dissipation factor under 5.10^-4 at 1V_rms and 1MHz for values ≤ 1000pF and under 5.10^-4 at 1V_rms and 1KHz for values > 1000pF
Insulation resistance of 25°C/Un 10⁵ MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 10⁴ MΩ or 100 Ohm-Farad whichever is less
Dielectric strength test performed per method 103 of EIA 198-2-E

SRT Microcéramique

SRT Microcéramique High Power Low Frequency Capacitor Series

MLCC high power, low capacitance variation with voltage capacitors
Highest quality and reliability, suitable for safety-critical industries
Dissipation factor under 10.10^-4 at 1V_rms and 1kHz (or 1MHz)
Insulation resistance under 20000 MOhm or 500 Ohm-Farad at 25°C under 500V
Dielectric strength test performed per method 103 of EIA 198-2-E

SRT Microcéramique

SRT Microcéramique High Temperature NP0 Capacitor Series

High Temperature, ultra stable MLCC Capacitor
Highest quality and reliability, suitable for safety-critical industries
Dissipation factor under 10.10^-4 at 1V_rms and 1kHz (or 1MHz)
Insulation resistance of 25°C/Un 10⁵ MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 10⁴ MΩ or 100 Ohm-Farad whichever is less
Dielectric strength test performed per method 103 of EIA 198-2-E

SRT Microcéramique

SRT Microcéramique High Temperature X7R Capacitor Series

High Temperature MLCC Capacitor
Highest quality and reliability, suitable for safety-critical industries
Dissipation factor up to 0.025
Insulation resistance of 25°C/Un 10⁵ MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 10⁴ MΩ or 100 Ohm-Farad whichever is less
Dielectric strength test performed per method 103 of EIA 198-2-E

SRT Microcéramique

SRT Microcéramique High Voltage NP0 Capacitor Series (200V-1kV)

Ultra stable ceramic capacitor
Highest quality and reliability, suitable for safety-critical industries
Dissipation factor under 10.10^-4 at 1V_rms and 1kHz (or 1MHz)
Insulation resistance of 25°C/Un 10⁵ MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 10⁴ MΩ or 100 Ohm-Farad whichever is less
Dielectric strength test performed per method 103 of EIA 198-2-E

SRT Microcéramique

SRT Microcéramique High Voltage NP0 Capacitor Series (2kV-10kV)

Ultra stable ceramic capacitor
Highest quality and reliability, suitable for safety-critical industries
Dissipation factor under 10.10^-4 at 1V_rms and 1kHz (or 1MHz)
Insulation resistance of 25°C/Un 10⁵ MΩ or 1000 Ohm-Farad whichever is less and 125°C/Un 10⁴ MΩ or 100 Ohm-Farad whichever is less
Dielectric strength test performed per method 103 of EIA 198-2-E