The IL711T-3E high temperature, high speed digital isolator from NVE is a two channel CMOS device with typical data rate of 110Mbps. It features an isolation voltage of 2.5kVrms and 600 Vrms working voltage per VDE V 0884-10. The IL711T-3E isolators are available in an 8-pin SOIC package and are specified over a temperature range of โ40ยฐC to +125ยฐC. These isolators are the industry standard for solid-state signal isolation and the ultimate in usable data rate and performance. The IL711T-3E series from NVE are manufactured with NVEโs patented IsoLoopยฎ spintronic Giant Magnetoresistive (GMR) technology. A unique ceramic/polymer composite barrier provides excellent isolation and virtually unlimited barrier life. The IL711 series, including IL711T-3E is UL1577 recognised and certified to VDE V 0884-10.
The NVE IL711T-3E series symmetric magnetic coupling barrier provides a typical propagation delay of only 10ns and a pulse width distortion as low as 0.3ns, achieving the best specifications of any isolator. Typical transient immunity of 50 kV/ยตs is unsurpassed.
Typical applications for the IL711 series include:
The below table gives the recommended operating conditions of the NVE IL711 high speed digital isolator series including the IL711T-3E:
| Weight | 0.02500 kg |
|---|---|
| Dimensions | 1.57 x 4.00 x 5.00mm |
| Creepage Distance | 4.03mm |
| Maximum Data Rate | 110 Mbps |
| Propagation Delay | 10ns at 5V |
| Series / Model | |
| Supply Voltage | 3 to 5V |
| Temperature Range (ยฐC) | -40 to +125ยฐC |
Due to the technical complexity nature of these components, complete specifications, performance data, dimensional information and configuration options are provided within the product datasheet.
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