InterFET

InterFET

Standard and Custom Discrete Junction Field Effect Transistors (JFETs)

  • High volume, low noise, radiation-tolerant JFETs
  • N channel, P channel, matched pairs and arrays as well as custom JFETs available
  • SMD, die and wafer options possible
  • Cross references against other JFET manufacturers and their obsoleted parts

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InterFET 2N4117 and 2N4117A Series

  • Through-hole N-channel JFET
  • Low leakage of 0.25pA typical
  • Low input capacitance of 2pF typical
  • Minimum gate to source breakdown voltage of -40V
  • Maximum gate to source reverse current of -10pA (2N4117) or -1pA (2N4117A)
  • Drain to source saturation current 0.03mA minimum
  • Gate to source cutoff voltage of -0.6V minimumto 1.8V maximum
  • Hermetically sealed TO-72 package suitable for military applications or bare die packages available
  • Forward transconductance of 70μS minimum
  • Continuous device power dissipation 300mW
  • Power derating of 2mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET 2N4117 and 2N4117A Series of N-channel JFETs are targeted for ultra high input impedance applications for mid to high frequency designs. These JFETS offers a gate to source breakdown Voltage of either -40V, a low leakage of 0.25pA (typical) and comes in a through-hole TO-72 package which is hermetically sealed and suitable for military applications, also available as a bare die. The 2N4117 and 2N4117A JFETs have a drain to source saturation current of 0.03mA, low input capacitance of 2pF (typical), high input impedance and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the 2N4117 and 2N4117A JFET series are available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the 2N4117 and 2N4117A JFET series from InterFET include:

  • Low leakage input buffer
  • High frequency amplifier/buffer
  • Ultra high impedance pre-amplifier
  • Voltage controlled resistor
  • Current limiters and regulators

The below table gives the maximum ratings for each resistor model available for the InterFET 2N4117 and 2N4117A series:

InterFET 2N4117 and 2N4117A Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET 2N4416 and 2N4416A Series

  • Through-hole N-channel JFET
  • N0026S Geometry
  • Low gate leakage of 10pA typical
  • Low noise of 4nV/√Hz typical
  • Minimum gate to source breakdown Voltage of -30V (2N4416) or -35V (2N4416A)
  • Drain to source saturation current 5mA minimum
  • Gate to source cutoff voltage of -2.5V minimum (2N4416A)
  • Hermetically sealed TO-72 package suitable for military applications or bare die packages available
  • Forward transconductance of 4500μS minimum
  • Continuous device power dissipation 300mW
  • Power derating of 2mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET 2N4416 and 2N4416A series of N-channel JFETs offers N0026S geometry, with a gate to source breakdown Voltage of either -30V (2N4416) or -35V (2N4416A) and very low gate leakage of 10pA (typical). This JFET series comes in a through-hole TO-72 which is hermetically sealed and suitable for military applications or it is also available as a bare die package. The 2N4416 and 2N4416A JFETs have a drain to source saturation current of 5mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the 2N4416 and 2N4416A JFET series are available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the 2N4416 and 2N4416A JFET series from InterFET include:

  • Sensitive mixer applications
  • VHF Amplifiers

The below table gives the maximum ratings for each resistor model available for the InterFET 2N4416 and 2N4416A series:

InterFET 2N4416 Specifications

@TA = 25°C, Unless otherwise specified, highlighted values = A variant

£0.00 Ex Tax: £0.00

InterFET 2N5114 Series

  • Through-hole P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current -30mA minimum
  • Gate to source cutoff voltage of 5V minimum
  • Hermetically sealed TO-18 package suitable for military applications or bare die available
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET 2N5114 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a through-hole TO-18 package which is hermetically sealed and suitable for military applications and is also available as a bare die. The 2N5114 JFET have a drain to source saturation current of -30mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the 2N5114 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the 2N5114 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET 2N5114 series:

InterFET 2N5114 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET 2N5115 Series

  • Through-hole P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current of -15mA minimum
  • Gate to source cutoff voltage of 3V minimum
  • Hermetically sealed TO-18 package suitable for military applications or as a bare die
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET 2N5115 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a through-hole TO-18 package which is hermetically sealed and suitable for military applications and is also available as a bare die. The 2N5115 JFET has a drain to source saturation current of -15mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the 2N5115 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the 2N5115 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET 2N5115 series:

InterFET 2N5114 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET 2N5116 Series

  • Through-hole P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current of -5mA minimum
  • Gate to source cutoff voltage of 1V minimum
  • Hermetically sealed TO-18 package suitable for military applications or bare die packages available
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET 2N5116 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a through-hole TO-18 package which is hermetically sealed and suitable for military applications and is also available as a bare die package. The 2N5116 JFET has a drain to source saturation current of -5mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the 2N5116 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the 2N5116 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET 2N5116 series:

InterFET 2N5114 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET PN4416 and PN4416A Series

  • Through-hole N-channel JFET
  • N0026S Geometry
  • Low gate leakage of 10pA typical
  • Low noise of 4nV/√Hz typical
  • Minimum gate to source breakdown Voltage of -30V (PN4416) or -35V (PN4416A)
  • Drain to source saturation current 5mA minimum
  • Gate to source cutoff voltage of -2.5V minimum (PN4416A)
  • TO-92 or bare die packages available
  • Forward transconductance of 4500μS minimum
  • Continuous device power dissipation 300mW
  • Power derating of 2mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET PN4416 and PN4416A series of N-channel JFETs offers N0026S geometry, with a gate to source breakdown Voltage of either -30V (PN4416) or -35V (PN4416A) and very low gate leakage of 10pA (typical). This JFET series comes in a through-hole TO-92 package or it is also available as a bare die package. The PN4416 and PN4416A JFETs have a drain to source saturation current of 5mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the PN4416 and PN4416A JFET series are available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the PN4416 and PN4416A JFET series from InterFET include:

  • Sensitive mixer applications
  • VHF Amplifiers

The below table gives the maximum ratings for each resistor model available for the InterFET PN4416 and PN4416A series:

InterFET 2N4416 Specifications

@TA = 25°C, Unless otherwise specified, highlighted values = A variant

£0.00 Ex Tax: £0.00

InterFET PN5114 Series

  • Through-hole P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current -30mA minimum
  • Gate to source cutoff voltage of 5V minimum
  • TO-92 package or available in bare die
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET PN5114 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a through-hole TO-92 package or it is also available as a bare die. The PN5114 JFET have a drain to source saturation current of -30mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the PN5114 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the PN5114 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET PN5114 series:

InterFET PN5114 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET PN5115 Series

  • Through-hole P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current of -15mA minimum
  • Gate to source cutoff voltage of 3V minimum
  • TO-92 package or available as a bare die
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET PN5115 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a through-hole TO-92 package and is also available as a bare die. The PN5115 JFET has a drain to source saturation current of -15mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the PN5115 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the PN5115 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET PN5115 series:

InterFET PN5114 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET PN5116 Series

  • Through-hole P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current of -5mA minimum
  • Gate to source cutoff voltage of 1V minimum
  • Hermetically sealed TO-18 package suitable for military applications or bare die packages available
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET PN5116 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a through-hole TO-92 package and is also available as a bare die. The PN5116 JFET has a drain to source saturation current of -5mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the PN5116 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the PN5116 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET PN5116 series:

InterFET PN5116 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET SMP4416 and SMP4416A Series

  • Surface-mount N-channel JFET
  • N0026S Geometry
  • Low gate leakage of 10pA typical
  • Low noise of 4nV/√Hz typical
  • Minimum gate to source breakdown Voltage of -30V (SMP4416) or -35V (SMP4416A)
  • Drain to source saturation current 5mA minimum
  • Gate to source cutoff voltage of -2.5V minimum (SMP4416A)
  • SOT23 available in bulk or tape and reel packaging, bare die packages also available
  • Forward transconductance of 4500μS minimum
  • Continuous device power dissipation 300mW
  • Power derating of 2mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET SMP4416 and SMP4416A series of N-channel JFETs offers N0026S geometry, with a gate to source breakdown Voltage of either -30V (SMP4416) or -35V (SMP4416A) and very low gate leakage of 10pA (typical). This JFET series comes in a surface-mount SOT23 package available in bulk or tape and reel, it is also available as a bare die. The SMP4416 and SMP4416A JFETs have a drain to source saturation current of 5mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the SMP4416 and SMP4416A JFET series are available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the SMP4416 and SMP4416A JFET series from InterFET include:

  • Sensitive mixer applications
  • VHF Amplifiers

The below table gives the maximum ratings for each resistor model available for the InterFET SMP4416 and SMP4416A series:

InterFET 2N4416 Specifications

@TA = 25°C, Unless otherwise specified, highlighted values = A variant

£0.00 Ex Tax: £0.00

InterFET SMP5114 Series

  • Surface-mount P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current -30mA minimum
  • Gate to source cutoff voltage of 5V minimum
  • SOT23 package available in bulk or tape and reel or as a bare die
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET SMP5114 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a surface-mount SOT23 package and is also available as a bare die. The SMP5114 JFET have a drain to source saturation current of -30mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the SMP5114 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the SMP5114 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET SMP5114 series:

InterFET 2N5114 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET SMP5115 Series

  • Surface-mount P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current of -15mA minimum
  • Gate to source cutoff voltage of 3V minimum
  • SOT23 package in bulk or tape and reel or as a bare die
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET SMP5115 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a through-hole SOT23 package and is also available as a bare die. The SMP5115 JFET has a drain to source saturation current of -15mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the SMP5115 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the SMP5115 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET SMP5115 series:

InterFET SMP5115 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00

InterFET SMP5116 Series

  • Surface-mount P-channel JFET
  • InterFET P0099F Geometry
  • Low noise of 8nV/√Hz typical
  • Minimum gate to source breakdown Voltage of 30V
  • Drain to source saturation current of -5mA minimum
  • Gate to source cutoff voltage of 1V minimum
  • SOT23 package available in bulk or tape and reel or as a bare die
  • Continuous forward gate current 50mA
  • Continuous device power dissipation 500mW
  • Power derating of 4mW/°C
  • Operating temperature between -55°C and +125°C

The InterFET SMP5116 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a surface-mount SOT23 package and is also available as a bare die. The SMP5116 JFET has a drain to source saturation current of -5mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the SMP5116 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the SMP5116 JFET series from InterFET include:

  • Analog switches
  • Choppers

The below table gives the maximum ratings for the InterFET SMP5116 series:

InterFET SMP5116 Specifications

@TA = 25°C, Unless otherwise specified

£0.00 Ex Tax: £0.00