InterFET SMP5116 Series

Description

• Surface-mount P-channel JFET
• InterFET P0099F Geometry
• Low noise of 8nV/√Hz typical
• Minimum gate to source breakdown Voltage of 30V
• Drain to source saturation current of -5mA minimum
• Gate to source cutoff voltage of 1V minimum
• SOT23 package available in bulk or tape and reel or as a bare die
• Continuous forward gate current 50mA
• Continuous device power dissipation 500mW
• Power derating of 4mW/°C
• Temperature range between -55°C and +125°C

The InterFET SMP5116 series of P-channel JFETs offers P0099F geometry, with a gate to source breakdown Voltage 30V and Low noise of 8nV/√Hz. This JFET series comes in a surface-mount SOT23 package and is also available as a bare die. The SMP5116 JFET has a drain to source saturation current of -5mA and can be operated in a temperature range of -55°C to +125°C.

As with all InterFET products, the SMP5116 JFET series is available for customisation to meet even the strictest application demands. The customisable features include unique test or review parameters, package style, binning options, channel configurations, multi-geometry and hybrid solutions and many others.

Typical applications for the SMP5116 JFET series from InterFET include:

• Analog switches
• Choppers

The below table gives the maximum ratings for the InterFET SMP5116 series:

@TA = 25°C, Unless otherwise specified